ION-IMPLANTATION

Label

• ION-IMPLANTATION (literal)

Membro di

• Parole chiave di "Copper-based nanocluster composite silica films by rf-sputtering deposition" (Insieme di parole chiave)
• Keywords of "Thermal evolution of cobalt nanocrystals embedded in silica" (Insieme di parole chiave)
• Keywords of "High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures >= 1700 degrees C" (Insieme di parole chiave)
• Parole chiave di "Nanoporous Ge electrode as a template for nano-sized (< 5 nm) Au aggregates" (Insieme di parole chiave)
• Parole chiave di "Physical insight into the phenomenon of B clustering in Si at room temperature" (Insieme di parole chiave)
• Parole chiave di "Surface morphology of Mn+ implanted Ge(100): A systematic investigation as a function of the implantation substrate temperature" (Insieme di parole chiave)
• Keywords of "Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature" (Insieme di parole chiave)
• Parole chiave di "Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon" (Insieme di parole chiave)
• Parole chiave di "Effects of heating ramp rates on the characteristics of AI implanted 4H-SiC junctions" (Insieme di parole chiave)
• Parole chiave di "B electrical activation in crystalline and preamorphized Ge" (Insieme di parole chiave)
• Parole chiave di "Au-Cu nanoparticles in silica glass as composite material for photonic applications" (Insieme di parole chiave)

Value

• ION-IMPLANTATION (literal)

Incoming links:

Ha membro

• Keywords of "Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature" (Insieme di parole chiave)
• Parole chiave di "Nanoporous Ge electrode as a template for nano-sized (< 5 nm) Au aggregates" (Insieme di parole chiave)
• Keywords of "High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures >= 1700 degrees C" (Insieme di parole chiave)
• Keywords of "Thermal evolution of cobalt nanocrystals embedded in silica" (Insieme di parole chiave)
• Parole chiave di "Au-Cu nanoparticles in silica glass as composite material for photonic applications" (Insieme di parole chiave)
• Parole chiave di "Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon" (Insieme di parole chiave)
• Parole chiave di "B electrical activation in crystalline and preamorphized Ge" (Insieme di parole chiave)
• Parole chiave di "Surface morphology of Mn+ implanted Ge(100): A systematic investigation as a function of the implantation substrate temperature" (Insieme di parole chiave)
• Parole chiave di "Physical insight into the phenomenon of B clustering in Si at room temperature" (Insieme di parole chiave)
• Parole chiave di "Copper-based nanocluster composite silica films by rf-sputtering deposition" (Insieme di parole chiave)
• Parole chiave di "Effects of heating ramp rates on the characteristics of AI implanted 4H-SiC junctions" (Insieme di parole chiave)