C-V
- Label
- C-V (literal)
- Membro di
- Keywords of "The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface" (Insieme di parole chiave)
- Parole chiave di "Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states" (Insieme di parole chiave)
- Keywords of "C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes." (Insieme di parole chiave)
- Value
- C-V (literal)
Incoming links:
- Ha membro
- Parole chiave di "Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states" (Insieme di parole chiave)
- Keywords of "C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes." (Insieme di parole chiave)
- Keywords of "The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface" (Insieme di parole chiave)
