Keywords of "Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation"

Label

• Keywords of "Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation" (literal)
• Parole chiave di "Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation" (literal)

Insieme di parole chiave di

• Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation (Articolo in rivista) (Prodotto della ricerca)

Ha membro

• Radiation damage (Parola chiave)
• Annealing effects (Parola chiave)
• Silicon carbide Detectors (Parola chiave)

Incoming links:

Insieme di parole chiave

• Annealing Effects on Leakage Current and Epilayer Doping Concentration of p+n Junction 4H-SiC Diodes after Very High Neutron Irradiation (Articolo in rivista) (Prodotto della ricerca)

Membro di

• Radiation damage (Parola chiave)
• Annealing effects (Parola chiave)
• Silicon carbide Detectors (Parola chiave)