Keywords of "Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories"
- Label
- Keywords of "Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories" (literal)
- Parole chiave di "Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories" (literal)
- Insieme di parole chiave di
- Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Ha membro
- scaling laws (Parola chiave)
- Quantum dots (Parola chiave)
- chemical vapor deposition (Parola chiave)
- nanoelectronic devices (Parola chiave)
Incoming links:
- Insieme di parole chiave
- Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Membro di
- Quantum dots (Parola chiave)
- chemical vapor deposition (Parola chiave)
- scaling laws (Parola chiave)
- nanoelectronic devices (Parola chiave)
