Keywords of "Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process"

Label

• Keywords of "Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process" (literal)
• Parole chiave di "Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process" (literal)

Insieme di parole chiave di

• Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process (Articolo in rivista) (Prodotto della ricerca)

Ha membro

• LIQUID INJECTION MOCVD; OXIDE THIN-FILMS; GATE DIELECTRICS; EPITAXIAL-GROWTH; SI(001); PHOTOEMISSION; PR2O3; TRANSITION; OXIDATION; EXPOSURE (Parola chiave)

Incoming links:

Insieme di parole chiave

• Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process (Articolo in rivista) (Prodotto della ricerca)

Membro di

• LIQUID INJECTION MOCVD; OXIDE THIN-FILMS; GATE DIELECTRICS; EPITAXIAL-GROWTH; SI(001); PHOTOEMISSION; PR2O3; TRANSITION; OXIDATION; EXPOSURE (Parola chiave)