Keywords of "Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)"
- Label
- Keywords of "Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)" (literal)
- Parole chiave di "Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)" (literal)
- Insieme di parole chiave di
- Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001) (Articolo in rivista) (Prodotto della ricerca)
- Ha membro
- TEMPERATURE (Parola chiave)
- SUBSTRATE (Parola chiave)
- MOLECULAR-BEAM EPITAXY (Parola chiave)
- GROWTH (Parola chiave)
- SURFACE (Parola chiave)
Incoming links:
- Insieme di parole chiave
- Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001) (Articolo in rivista) (Prodotto della ricerca)
- Membro di
- SURFACE (Parola chiave)
- GROWTH (Parola chiave)
- TEMPERATURE (Parola chiave)
- MOLECULAR-BEAM EPITAXY (Parola chiave)
- SUBSTRATE (Parola chiave)
