Keywords of "1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates"

Label

• Keywords of "1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates" (literal)
• Parole chiave di "1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates" (literal)

Insieme di parole chiave di

• 1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates (Articolo in rivista) (Prodotto della ricerca)

Ha membro

• semiconductor growth (Parola chiave)
• III-V semiconductors (Parola chiave)
• semiconductor quantum dots (Parola chiave)
• molecular beam epitaxial growth (Parola chiave)
• photoluminescence (Parola chiave)

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Insieme di parole chiave

• 1.59 µm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates (Articolo in rivista) (Prodotto della ricerca)

Membro di

• III-V semiconductors (Parola chiave)
• semiconductor quantum dots (Parola chiave)
• semiconductor growth (Parola chiave)
• photoluminescence (Parola chiave)
• molecular beam epitaxial growth (Parola chiave)