Parole chiave di "Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3"

Label

• Parole chiave di "Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3" (literal)
• Keywords of "Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3" (literal)

Insieme di parole chiave di

• Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 (Articolo in rivista) (Prodotto della ricerca)

Ha membro

• Scanning Capacitance Microscopy (Parola chiave)
• [object Object] (Parola chiave)
• Scanning Spreading Resistance Microscopy (Parola chiave)
• 4H-SiC (Parola chiave)
• Post-Oxidadion Annealing (Parola chiave)

Incoming links:

Insieme di parole chiave

• Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 (Articolo in rivista) (Prodotto della ricerca)

Membro di

• [object Object] (Parola chiave)
• 4H-SiC (Parola chiave)
• Scanning Capacitance Microscopy (Parola chiave)
• Post-Oxidadion Annealing (Parola chiave)
• Scanning Spreading Resistance Microscopy (Parola chiave)