Keywords of "AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties"
- Label
- Keywords of "AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties" (literal)
- Parole chiave di "AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties" (literal)
- Insieme di parole chiave di
- AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Ha membro
- ELECTRICAL-PROPERTIES (Parola chiave)
- MOLECULAR-BEAM EPITAXY (Parola chiave)
- GAN (Parola chiave)
- PULSED-LASER DEPOSITION (Parola chiave)
- ALUMINUM NITRIDE (Parola chiave)
- RAMAN-SCATTERING (Parola chiave)
- ABLATION (Parola chiave)
- GROWTH (Parola chiave)
- SI(111) (Parola chiave)
Incoming links:
- Insieme di parole chiave
- AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Membro di
- ELECTRICAL-PROPERTIES (Parola chiave)
- GROWTH (Parola chiave)
- MOLECULAR-BEAM EPITAXY (Parola chiave)
- RAMAN-SCATTERING (Parola chiave)
- ABLATION (Parola chiave)
- PULSED-LASER DEPOSITION (Parola chiave)
- GAN (Parola chiave)
- ALUMINUM NITRIDE (Parola chiave)
- SI(111) (Parola chiave)
