Parole chiave di "Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability"

Label

• Parole chiave di "Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability" (literal)
• Keywords of "Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability" (literal)

Insieme di parole chiave di

• Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability (Contributo in atti di convegno) (Prodotto della ricerca)

Ha membro

• NITROGEN (Parola chiave)
• CHANNEL MOBILITY (Parola chiave)
• MOS CAPACITORS (Parola chiave)

Incoming links:

Insieme di parole chiave

• Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability (Contributo in atti di convegno) (Prodotto della ricerca)

Membro di

• NITROGEN (Parola chiave)
• MOS CAPACITORS (Parola chiave)
• CHANNEL MOBILITY (Parola chiave)