Keywords of "Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer"

Label

• Keywords of "Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer" (literal)
• Parole chiave di "Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer" (literal)

Insieme di parole chiave di

• Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)

Ha membro

• High-Low C-V (Parola chiave)
• n-MOS capacitors (Parola chiave)
• N implantation (Parola chiave)
• TDRC (Parola chiave)
• interface states (Parola chiave)

Incoming links:

Insieme di parole chiave

• Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)

Membro di

• N implantation (Parola chiave)
• interface states (Parola chiave)
• n-MOS capacitors (Parola chiave)
• TDRC (Parola chiave)
• High-Low C-V (Parola chiave)