Parole chiave di "High-quality InGaAs/InP interfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells"

Label

• Parole chiave di "High-quality InGaAs/InP interfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells" (literal)
• Keywords of "High-quality InGaAs/InP interfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells" (literal)

Insieme di parole chiave di

• High-quality InGaAs/InP interfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)

Ha membro

• MOVPE (Parola chiave)
• heterostructure (Parola chiave)
• tert-butylarsine (Parola chiave)
• III-V semiconductor (Parola chiave)
• interfaces (Parola chiave)

Incoming links:

Insieme di parole chiave

• High-quality InGaAs/InP interfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)

Membro di

• interfaces (Parola chiave)
• MOVPE (Parola chiave)
• heterostructure (Parola chiave)
• III-V semiconductor (Parola chiave)
• tert-butylarsine (Parola chiave)