Keywords of "Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V characteristics versus annealing temperature"

Label

• Keywords of "Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V characteristics versus annealing temperature" (literal)
• Parole chiave di "Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V characteristics versus annealing temperature" (literal)

Insieme di parole chiave di

• Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V characteristics versus annealing temperature (Abstract/Poster in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1302)

Ha membro

• 4H-SiC (Parola chiave)
• annealing (Parola chiave)
• ion implantation (Parola chiave)
• p+/n junction diode (Parola chiave)

Incoming links:

Insieme di parole chiave

• Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V characteristics versus annealing temperature (Abstract/Poster in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1302)

Membro di

• 4H-SiC (Parola chiave)
• ion implantation (Parola chiave)
• annealing (Parola chiave)
• p+/n junction diode (Parola chiave)