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- Stack Engineering of HfO2-based Charge Trapping Non-volatile Memory (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista) (Prodotto della ricerca)
- Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Evaluation of DyScO(x) as an alternative blocking dielectric in TANOS memories with Si(3)N(4) or Si-rich SiN charge trapping layers (Articolo in rivista) (Prodotto della ricerca)
- Stack engineering of TANOS charge-trap flash memory cell using high-kappa ZrO(2) grown by ALD as charge trapping layer (Articolo in rivista) (Prodotto della ricerca)
- Band alignment at the La2Hf2O7/(001)Si interface (Articolo in rivista) (Prodotto della ricerca)
- Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors (Articolo in rivista) (Prodotto della ricerca)
- Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Low-power resistive switching in Au/NiO/Au nanowire arrays (Articolo in rivista) (Prodotto della ricerca)
- Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition (Articolo in rivista) (Prodotto della ricerca)
- Engineered fabrication of ordered arrays of Au-NiO-Au nanowires (Articolo in rivista) (Prodotto della ricerca)
- Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories (Articolo in rivista) (Prodotto della ricerca)
- Switching of nanosized filaments in NiO by conductive atomic force microscopy (Articolo in rivista) (Prodotto della ricerca)
- Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices (Articolo in rivista) (Prodotto della ricerca)
- Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly (Articolo in rivista) (Prodotto della ricerca)
- Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Preface to E-MRS 2012 Symposium L: Novel Functional Materials and Nanostructures for innovative non-volatile memory devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Reset current reduction and set-reset instabilities in unipolar NiO RRAM (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- ZnO based selectors for crossbar non-volatile memories (Abstract/Poster in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1302)
- Resistive switching in NiO based nanowire array for low power RERAM (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Low-temperature atomic layer deposition of MgO thin films on Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Vibrational and electrical properties of hexagonal La2O3 films (vol 91, art no. 102901, 2007) (Articolo in rivista) (Prodotto della ricerca)
- Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Vibrational and electrical properties of hexagonal La2O3 films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM (Contributo in atti di convegno) (Prodotto della ricerca)
- Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) (Articolo in rivista) (Prodotto della ricerca)
- Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Local structure of Sn implanted in thin SiO2 films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Structure and interface bonding of GeO2/Ge/In0.15Ga0.85As heterostructures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 (Articolo in rivista) (Prodotto della ricerca)
- Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Energy-band diagram of metal/Lu2O3/silicon structures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Transition metal binary oxides for ReRAM applications (Contributo in atti di convegno) (Prodotto della ricerca)
- Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects (Articolo in rivista) (Prodotto della ricerca)
- Active trap determination at the interface of Ge and In 0.53Ga 0.47As substrates with dielectric layers (Articolo in rivista) (Prodotto della ricerca)
- Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces (Articolo in rivista) (Prodotto della ricerca)
- Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- X-ray absorption study of the growth of Y2O3 on Si(001) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Formation and disruption of conductive filaments in a HfO2/TiN structure (Articolo in rivista) (Prodotto della ricerca)
- From Sub-micrometric to Nanometric Electrical Investigation of Resistance Switching Operations in NiO Films Dedicated to Resistive RAM Applications (Contributo in atti di convegno) (Prodotto della ricerca)
- Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Effects of surface passivation during atomic layer deposition of Al(2)O(3) on In(0.53)Ga(0.47)As substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Characterization of transient currents in HfO2 capacitors in the short timescale (Articolo in rivista) (Prodotto della ricerca)
- Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy (Articolo in rivista) (Prodotto della ricerca)
- HfO2 as gate dielectric on Ge: Interfaces and deposition techniques (Articolo in rivista) (Prodotto della ricerca)
- Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Conduction band offset of HfO2 on GaAs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Interface engineering for Ge metal-oxide-semiconductor devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As (Articolo in rivista) (Prodotto della ricerca)
- Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications (Articolo in rivista) (Prodotto della ricerca)
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- Autore CNR
- Stack Engineering of HfO2-based Charge Trapping Non-volatile Memory (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM (Contributo in atti di convegno) (Prodotto della ricerca)
- Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Vibrational and electrical properties of hexagonal La2O3 films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effects of the oxygen precursor on the interface between (100) Si and HfO2 films grown by atomic layer deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors (Articolo in rivista) (Prodotto della ricerca)
- Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition (Articolo in rivista) (Prodotto della ricerca)
- Band alignment at the La2Hf2O7/(001)Si interface (Articolo in rivista) (Prodotto della ricerca)
- Vibrational and electrical properties of hexagonal La2O3 films (vol 91, art no. 102901, 2007) (Articolo in rivista) (Prodotto della ricerca)
- HfO2 as gate dielectric on Ge: Interfaces and deposition techniques (Articolo in rivista) (Prodotto della ricerca)
- Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy (Articolo in rivista) (Prodotto della ricerca)
- Characterization of transient currents in HfO2 capacitors in the short timescale (Articolo in rivista) (Prodotto della ricerca)
- Interface engineering for Ge metal-oxide-semiconductor devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Conduction band offset of HfO2 on GaAs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Structure and interface bonding of GeO2/Ge/In0.15Ga0.85As heterostructures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Al(2)O(3) stacks on In(0.53)Ga(0.47)As substrates: In situ investigation of the interface (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effects of surface passivation during atomic layer deposition of Al(2)O(3) on In(0.53)Ga(0.47)As substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Stack engineering of TANOS charge-trap flash memory cell using high-kappa ZrO(2) grown by ALD as charge trapping layer (Articolo in rivista) (Prodotto della ricerca)
- Evaluation of DyScO(x) as an alternative blocking dielectric in TANOS memories with Si(3)N(4) or Si-rich SiN charge trapping layers (Articolo in rivista) (Prodotto della ricerca)
- Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- From Sub-micrometric to Nanometric Electrical Investigation of Resistance Switching Operations in NiO Films Dedicated to Resistive RAM Applications (Contributo in atti di convegno) (Prodotto della ricerca)
- High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista) (Prodotto della ricerca)
- Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0.53Ga0.47As(001) Surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As (Articolo in rivista) (Prodotto della ricerca)
- Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Energy-band diagram of metal/Lu2O3/silicon structures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces (Articolo in rivista) (Prodotto della ricerca)
- Low-temperature atomic layer deposition of MgO thin films on Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Engineered fabrication of ordered arrays of Au-NiO-Au nanowires (Articolo in rivista) (Prodotto della ricerca)
- Low-power resistive switching in Au/NiO/Au nanowire arrays (Articolo in rivista) (Prodotto della ricerca)
- Transition metal binary oxides for ReRAM applications (Contributo in atti di convegno) (Prodotto della ricerca)
- X-ray absorption study of the growth of Y2O3 on Si(001) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Local structure of Sn implanted in thin SiO2 films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- ZnO based selectors for crossbar non-volatile memories (Abstract/Poster in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1302)
- Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices (Articolo in rivista) (Prodotto della ricerca)
- Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories (Articolo in rivista) (Prodotto della ricerca)
- Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Formation and disruption of conductive filaments in a HfO2/TiN structure (Articolo in rivista) (Prodotto della ricerca)
- Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 (Articolo in rivista) (Prodotto della ricerca)
- Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications (Articolo in rivista) (Prodotto della ricerca)
- A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) (Articolo in rivista) (Prodotto della ricerca)
- Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects (Articolo in rivista) (Prodotto della ricerca)
- Active trap determination at the interface of Ge and In 0.53Ga 0.47As substrates with dielectric layers (Articolo in rivista) (Prodotto della ricerca)
- Interface quality of atomic layer deposited La-doped ZrO2 films on gepassivated In0.15Ga0.85As substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Synthesis and Investigation of New Materials in MIS Structures for the Development of Physical Foundations of CMOS Technologies of Nanoelectronics (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly (Articolo in rivista) (Prodotto della ricerca)
- Switching of nanosized filaments in NiO by conductive atomic force microscopy (Articolo in rivista) (Prodotto della ricerca)
- Resistive switching in NiO based nanowire array for low power RERAM (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Reset current reduction and set-reset instabilities in unipolar NiO RRAM (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Preface to E-MRS 2012 Symposium L: Novel Functional Materials and Nanostructures for innovative non-volatile memory devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
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