http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleInterno/MATRICOLA27655
CLAUDIA WIEMER
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- CLAUDIA WIEMER (literal)
- CLAUDIA WIEMER (literal)
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- Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment (Articolo in rivista) (Prodotto della ricerca)
- Chemical and Structural Properties of a TaN/HfO2 Gate Stack Processed Using Atomic Vapor Deposition (Articolo in rivista) (Prodotto della ricerca)
- Hot-wire chemical vapor growth and characterization of crystalline GeTe films (Articolo in rivista) (Prodotto della ricerca)
- Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD (Articolo in rivista) (Prodotto della ricerca)
- Metal-Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires (Articolo in rivista) (Prodotto della ricerca)
- Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors (Articolo in rivista) (Prodotto della ricerca)
- thermal properties of In-Sb-Te thin films for phase change memory application (Contributo in atti di convegno) (Prodotto della ricerca)
- Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effect of nitrogen doping on the thermal conductivity of GeTe thin films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Structural and electrical analysis of In-Sb-Te-based PCM cells (Articolo in rivista) (Prodotto della ricerca)
- Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM (Contributo in atti di convegno) (Prodotto della ricerca)
- [(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge(001) substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- The interface between Gd2O3 films and Ge(001): A comparative study between molecular and atomic oxygen mediated growths (Articolo in rivista) (Prodotto della ricerca)
- Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- LaHfOx Films Analyses for NVM Applications (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Material Perspectives for Phase Change Memories: The Role of Chemical Composition, Deposition Method, and Interfaces on the Thermal Properties of the Chalcogenide Material and of its Interfaces (Contributo in atti di convegno) (Prodotto della ricerca)
- Evolution of Interface Properties During Atomic Layer Deposition of Rare Earth-based High-k Dielectrics on Si, Ge and III-V Substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Electronic properties of crystalline Ge1-xSbxTey thin films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- XPS composition study of stacked Si oxide/Si nitride/Si oxide nano-layers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Thermal properties of In-Sb-Te films and interfaces for phase change memory devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Thermal resistance at the Al-Ge2Sb2Te5 interface (Articolo in rivista) (Prodotto della ricerca)
- Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process (Articolo in rivista) (Prodotto della ricerca)
- Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces (Articolo in rivista) (Prodotto della ricerca)
- Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C (Articolo in rivista) (Prodotto della ricerca)
- O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001) (Articolo in rivista) (Prodotto della ricerca)
- Interface Study in a \"Metal/High-k\" Gate Stack: Tantalum Nitride on Hafnium Oxide (Contributo in atti di convegno) (Prodotto della ricerca)
- Identification of the temperature-dependent thermal boundary resistance at a metal-phase change material (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS (Contributo in atti di convegno) (Prodotto della ricerca)
- Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications (Articolo in rivista) (Prodotto della ricerca)
- Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO(2) Thin Films on Germanium (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Process dependence of BTI reliability in advanced HK MG stacks (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Chemical vapor deposition of chalcogenide materials for phase-change memories (Articolo in rivista) (Prodotto della ricerca)
- Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications (Articolo in rivista) (Prodotto della ricerca)
- Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications (Articolo in rivista) (Prodotto della ricerca)
- Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy (Articolo in rivista) (Prodotto della ricerca)
- Structural and Electrical Properties of ALD Deposited Er-HfO2 for Gate Dielectric (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- CEMS characterisation of Fe/high-kappa oxide interfaces (Articolo in rivista) (Prodotto della ricerca)
- Rare earth-based high-k materials for non-volatile memory applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers - Preliminary results from the second round-robin (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Detection of the Tetragonal and Monoclinic Phases and their Role on the Dielectric Constant of ALD Deposited La-doped ZrO2 Thin Films on Ge (001) (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001) (Articolo in rivista) (Prodotto della ricerca)
- Au-catalyzed self assembly of GeTe nanowires by MOCVD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Dynamics of laser-induced phase switching in GeTe films (Articolo in rivista) (Prodotto della ricerca)
- X-ray absorption spectroscopy study of Yb2O3and Lu2O3 thin films deposited on Si(100) by atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Ultraviolet optical near-fields of micro spheres imprinted in phase change films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Photothermal Radiometry applied in nanoliter melted Tellurium alloys (Contributo in volume (capitolo o saggio)) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1201)
- A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) (Articolo in rivista) (Prodotto della ricerca)
- Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M=Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Epitaxial phase of hafnium dioxide for ultrascaled electronics (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 'high k' and 2 metal deposition techniques (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 (Articolo in rivista) (Prodotto della ricerca)
- Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition (Articolo in rivista) (Prodotto della ricerca)
- Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As (Articolo in rivista) (Prodotto della ricerca)
- Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Coautore
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- Autore CNR
- Evolution of Interface Properties During Atomic Layer Deposition of Rare Earth-based High-k Dielectrics on Si, Ge and III-V Substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Material Perspectives for Phase Change Memories: The Role of Chemical Composition, Deposition Method, and Interfaces on the Thermal Properties of the Chalcogenide Material and of its Interfaces (Contributo in atti di convegno) (Prodotto della ricerca)
- LaHfOx Films Analyses for NVM Applications (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM (Contributo in atti di convegno) (Prodotto della ricerca)
- Structural and Electrical Properties of ALD Deposited Er-HfO2 for Gate Dielectric (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Atomic layer deposition of Lu silicate films using [(Me3Si)(2)N](3)Lu (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 'high k' and 2 metal deposition techniques (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Epitaxial phase of hafnium dioxide for ultrascaled electronics (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Atomic layer deposition of NiO films on Si(100) using cyclopentadienyl-type compounds and ozone as precursors (Articolo in rivista) (Prodotto della ricerca)
- The interface between Gd2O3 films and Ge(001): A comparative study between molecular and atomic oxygen mediated growths (Articolo in rivista) (Prodotto della ricerca)
- Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications (Articolo in rivista) (Prodotto della ricerca)
- Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications (Articolo in rivista) (Prodotto della ricerca)
- Chemical vapor deposition of chalcogenide materials for phase-change memories (Articolo in rivista) (Prodotto della ricerca)
- CEMS characterisation of Fe/high-kappa oxide interfaces (Articolo in rivista) (Prodotto della ricerca)
- Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy (Articolo in rivista) (Prodotto della ricerca)
- Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge(001) substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- [(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers - Preliminary results from the second round-robin (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Study of the interfaces in resistive switching MID thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO(2) Thin Films on Germanium (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Rare earth-based high-k materials for non-volatile memory applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Dynamics of laser-induced phase switching in GeTe films (Articolo in rivista) (Prodotto della ricerca)
- Au-catalyzed self assembly of GeTe nanowires by MOCVD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Structural and electrical properties of Er-doped HfO(2) and of its interface with Ge (001) (Articolo in rivista) (Prodotto della ricerca)
- Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Metal-Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 nanowires (Articolo in rivista) (Prodotto della ricerca)
- Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C (Articolo in rivista) (Prodotto della ricerca)
- Ultraviolet optical near-fields of micro spheres imprinted in phase change films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment (Articolo in rivista) (Prodotto della ricerca)
- Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As (Articolo in rivista) (Prodotto della ricerca)
- Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001) (Articolo in rivista) (Prodotto della ricerca)
- Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications (Articolo in rivista) (Prodotto della ricerca)
- Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD (Articolo in rivista) (Prodotto della ricerca)
- XPS composition study of stacked Si oxide/Si nitride/Si oxide nano-layers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces (Articolo in rivista) (Prodotto della ricerca)
- Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process (Articolo in rivista) (Prodotto della ricerca)
- Thermal resistance at the Al-Ge2Sb2Te5 interface (Articolo in rivista) (Prodotto della ricerca)
- Process dependence of BTI reliability in advanced HK MG stacks (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS (Contributo in atti di convegno) (Prodotto della ricerca)
- Interface Study in a \"Metal/High-k\" Gate Stack: Tantalum Nitride on Hafnium Oxide (Contributo in atti di convegno) (Prodotto della ricerca)
- Photothermal Radiometry applied in nanoliter melted Tellurium alloys (Contributo in volume (capitolo o saggio)) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1201)
- X-ray absorption spectroscopy study of Yb2O3and Lu2O3 thin films deposited on Si(100) by atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M=Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Hot-wire chemical vapor growth and characterization of crystalline GeTe films (Articolo in rivista) (Prodotto della ricerca)
- Chemical and Structural Properties of a TaN/HfO2 Gate Stack Processed Using Atomic Vapor Deposition (Articolo in rivista) (Prodotto della ricerca)
- High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Electronic properties of crystalline Ge1-xSbxTey thin films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Identification of the temperature-dependent thermal boundary resistance at a metal-phase change material (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates (Contributo in atti di convegno) (Prodotto della ricerca)
- Detection of the Tetragonal and Monoclinic Phases and their Role on the Dielectric Constant of ALD Deposited La-doped ZrO2 Thin Films on Ge (001) (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Thermal properties of In-Sb-Te films and interfaces for phase change memory devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition (Articolo in rivista) (Prodotto della ricerca)
- Solid-state dewetting of ultra-thin Au films on SiO2and HfO2 (Articolo in rivista) (Prodotto della ricerca)
- Structural and electrical analysis of In-Sb-Te-based PCM cells (Articolo in rivista) (Prodotto della ricerca)
- Effect of nitrogen doping on the thermal conductivity of GeTe thin films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- thermal properties of In-Sb-Te thin films for phase change memory application (Contributo in atti di convegno) (Prodotto della ricerca)
- A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) (Articolo in rivista) (Prodotto della ricerca)
- Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
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