ALESSIO LAMPERTI
- Type
- Persona (Classe)
- Label
- ALESSIO LAMPERTI (literal)
- ALESSIO LAMPERTI (literal)
- Http://www.w3.org/2002/07/owl#sameAs
- ALESSIO LAMPERTI (Unità di personale esterno)
- Persona in rapporto
- Employment relationship with CNR of ING. ALESSIO LAMPERTI (Rapporto con CNR)
- Autore CNR di
- Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001) (Articolo in rivista) (Prodotto della ricerca)
- Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Thermal resistance at the Al-Ge2Sb2Te5 interface (Articolo in rivista) (Prodotto della ricerca)
- Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Evaluation of DyScO(x) as an alternative blocking dielectric in TANOS memories with Si(3)N(4) or Si-rich SiN charge trapping layers (Articolo in rivista) (Prodotto della ricerca)
- Stack engineering of TANOS charge-trap flash memory cell using high-kappa ZrO(2) grown by ALD as charge trapping layer (Articolo in rivista) (Prodotto della ricerca)
- Active trap determination at the interface of Ge and In 0.53Ga 0.47As substrates with dielectric layers (Articolo in rivista) (Prodotto della ricerca)
- Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects (Articolo in rivista) (Prodotto della ricerca)
- Spectroscopic ellipsometry model for optical constant of NiSi formed on silicon-on-insulator substrates (Articolo in rivista) (Prodotto della ricerca)
- Electronic and magnetic properties of iron doped zirconia: Theory and experiment (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Role of B diffusion in the interfacial Dzyaloshinskii-Moriya interaction in Ta/Co20Fe60B20/MgO nanowires (Articolo in rivista) (Prodotto della ricerca)
- Low depinning fields in Ta-CoFeB-MgO ultrathin films with perpendicular magnetic anisotropy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Transition metal binary oxides for ReRAM applications (Contributo in atti di convegno) (Prodotto della ricerca)
- Stabilization of tetragonal/cubic phase in Fe doped zirconia grown by atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O 3 layer (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Magnetic domain-wall racetrack memory for high density and fast data storage (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers - Preliminary results from the second round-robin (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Fe3-?O4/MgO/Co magnetic tunnel junctions synthesized by full in situ atomic layer and chemical vapour deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Low-temperature atomic layer deposition of MgO thin films on Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Exploiting magnetic properties of Fe doping in zirconia (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition (Articolo in rivista) (Prodotto della ricerca)
- Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical properties (Articolo in rivista) (Prodotto della ricerca)
- Chemical vapor deposition of polycrystalline Fe 3O 4 thin films by using the cyclohexadiene iron tricarbonyl liquid precursor (Articolo in rivista) (Prodotto della ricerca)
- Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices (Articolo in rivista) (Prodotto della ricerca)
- Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regime (Articolo in rivista) (Prodotto della ricerca)
- Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO(2) Thin Films on Germanium (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista) (Prodotto della ricerca)
- Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions (Articolo in rivista) (Prodotto della ricerca)
- Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories (Articolo in rivista) (Prodotto della ricerca)
- thermal properties of In-Sb-Te thin films for phase change memory application (Contributo in atti di convegno) (Prodotto della ricerca)
- Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Identification of the temperature-dependent thermal boundary resistance at a metal-phase change material (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Interface width evaluation in thin layered CoFeB/MgO multilayers including Ru or Ta buffer layer by X-ray reflectivity (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Experimental versus ab initio x-ray absorption of iron-doped zirconia: Trends in O K-edge spectra as a function of iron doping (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Detection of the Tetragonal and Monoclinic Phases and their Role on the Dielectric Constant of ALD Deposited La-doped ZrO2 Thin Films on Ge (001) (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications (Articolo in rivista) (Prodotto della ricerca)
- A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) (Articolo in rivista) (Prodotto della ricerca)
- Stack Engineering of HfO2-based Charge Trapping Non-volatile Memory (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Transitivity of band offsets between semiconductor heterojunctions and oxide insulators (Articolo in rivista) (Prodotto della ricerca)
- Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment (Articolo in rivista) (Prodotto della ricerca)
- Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Chemical nature of the passivation layer depending on the oxidizing agent in Gd(2)O(3)/GeO(2)/Ge stacks grown by molecular beam deposition (Articolo in rivista) (Prodotto della ricerca)
- Role of oxygen vacancies on the structure and density of states of iron-doped zirconia (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Coautore
- LUCA LAMAGNA (Persona)
- SILVIA MARIA PIETRALUNGA (Unità di personale interno)
- ALESSANDRO MOLLE (Persona)
- Pierpaolo Lupo (Persona)
- MARCO FANCIULLI (Persona)
- FRANCESCA CASOLI (Persona)
- PIERO TORELLI (Unità di personale interno)
- SILVIA VANGELISTA (Persona)
- Marco Campanini (Persona)
- ELENA CIANCI (Unità di personale interno)
- FRANCA ALBERTINI (Persona)
- SABINA SPIGA (Persona)
- ROBERTA CIPRIAN (Unità di personale esterno)
- MICHELE PEREGO (Persona)
- ROBERTO MANTOVAN (Persona)
- CLAUDIA WIEMER (Persona)
- SILVIA BALDOVINO (Unità di personale esterno)
- LAURA LAZZARINI (Unità di personale interno)
- LUCA PELLEGRINO (Persona)
- ALBERTO DEBERNARDI (Persona)
- SIMONE COCCO (Unità di personale interno)
- ROBERTO FALLICA (Persona)
- MASSIMO LONGO (Unità di personale interno)
- LUCIA NASI (Persona)
- GRAZIELLA TALLARIDA (Persona)
- MARCO FANCIULLI (Persona)
- SILVIA MILITA (Persona)
- Nome
- ALESSIO (literal)
- Cognome
- LAMPERTI (literal)
- Afferisce a
Incoming links:
- Autore CNR
- Stack Engineering of HfO2-based Charge Trapping Non-volatile Memory (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers - Preliminary results from the second round-robin (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO(2) Thin Films on Germanium (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Chemical nature of the passivation layer depending on the oxidizing agent in Gd(2)O(3)/GeO(2)/Ge stacks grown by molecular beam deposition (Articolo in rivista) (Prodotto della ricerca)
- Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Stack engineering of TANOS charge-trap flash memory cell using high-kappa ZrO(2) grown by ALD as charge trapping layer (Articolo in rivista) (Prodotto della ricerca)
- Evaluation of DyScO(x) as an alternative blocking dielectric in TANOS memories with Si(3)N(4) or Si-rich SiN charge trapping layers (Articolo in rivista) (Prodotto della ricerca)
- Transitivity of band offsets between semiconductor heterojunctions and oxide insulators (Articolo in rivista) (Prodotto della ricerca)
- Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista) (Prodotto della ricerca)
- Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regime (Articolo in rivista) (Prodotto della ricerca)
- Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment (Articolo in rivista) (Prodotto della ricerca)
- Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001) (Articolo in rivista) (Prodotto della ricerca)
- Thermal resistance at the Al-Ge2Sb2Te5 interface (Articolo in rivista) (Prodotto della ricerca)
- Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Spectroscopic ellipsometry model for optical constant of NiSi formed on silicon-on-insulator substrates (Articolo in rivista) (Prodotto della ricerca)
- Low-temperature atomic layer deposition of MgO thin films on Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Magnetic domain-wall racetrack memory for high density and fast data storage (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Role of oxygen vacancies on the structure and density of states of iron-doped zirconia (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Exploiting magnetic properties of Fe doping in zirconia (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Transition metal binary oxides for ReRAM applications (Contributo in atti di convegno) (Prodotto della ricerca)
- Interface width evaluation in thin layered CoFeB/MgO multilayers including Ru or Ta buffer layer by X-ray reflectivity (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Low depinning fields in Ta-CoFeB-MgO ultrathin films with perpendicular magnetic anisotropy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Identification of the temperature-dependent thermal boundary resistance at a metal-phase change material (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Detection of the Tetragonal and Monoclinic Phases and their Role on the Dielectric Constant of ALD Deposited La-doped ZrO2 Thin Films on Ge (001) (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Stabilization of tetragonal/cubic phase in Fe doped zirconia grown by atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices (Articolo in rivista) (Prodotto della ricerca)
- Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical properties (Articolo in rivista) (Prodotto della ricerca)
- Chemical vapor deposition of polycrystalline Fe 3O 4 thin films by using the cyclohexadiene iron tricarbonyl liquid precursor (Articolo in rivista) (Prodotto della ricerca)
- Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions (Articolo in rivista) (Prodotto della ricerca)
- Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories (Articolo in rivista) (Prodotto della ricerca)
- Electronic and magnetic properties of iron doped zirconia: Theory and experiment (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Phase Stabilization of Al:HfO2 Grown on In(x)Gal(1-x)As Substrates (x=0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition (Articolo in rivista) (Prodotto della ricerca)
- Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O 3 layer (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- thermal properties of In-Sb-Te thin films for phase change memory application (Contributo in atti di convegno) (Prodotto della ricerca)
- Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications (Articolo in rivista) (Prodotto della ricerca)
- Role of B diffusion in the interfacial Dzyaloshinskii-Moriya interaction in Ta/Co20Fe60B20/MgO nanowires (Articolo in rivista) (Prodotto della ricerca)
- Experimental versus ab initio x-ray absorption of iron-doped zirconia: Trends in O K-edge spectra as a function of iron doping (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Fe3-?O4/MgO/Co magnetic tunnel junctions synthesized by full in situ atomic layer and chemical vapour deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) (Articolo in rivista) (Prodotto della ricerca)
- Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition (Articolo in rivista) (Prodotto della ricerca)
- Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects (Articolo in rivista) (Prodotto della ricerca)
- Active trap determination at the interface of Ge and In 0.53Ga 0.47As substrates with dielectric layers (Articolo in rivista) (Prodotto della ricerca)
- Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Trimethylaluminum-Based Atomic Layer Deposition of MO2 (M= Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
- Coautore
- FRANCA ALBERTINI (Persona)
- SABINA SPIGA (Persona)
- FRANCESCA CASOLI (Persona)
- PIERO TORELLI (Unità di personale interno)
- LUCIA NASI (Persona)
- MASSIMO LONGO (Unità di personale interno)
- SILVIA MILITA (Persona)
- CLAUDIA WIEMER (Persona)
- MARCO FANCIULLI (Persona)
- ALESSANDRO MOLLE (Persona)
- ELENA CIANCI (Unità di personale interno)
- SIMONE COCCO (Unità di personale interno)
- LAURA LAZZARINI (Unità di personale interno)
- MICHELE PEREGO (Persona)
- ROBERTO MANTOVAN (Persona)
- GRAZIELLA TALLARIDA (Persona)
- ALBERTO DEBERNARDI (Persona)
- http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID24164
- MARCO FANCIULLI (Persona)
- Marco Campanini (Persona)
- Pierpaolo Lupo (Persona)
- http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID22627
- SILVIA BALDOVINO (Unità di personale esterno)
- LUCA PELLEGRINO (Persona)
- SILVIA MARIA PIETRALUNGA (Unità di personale interno)
- SILVIA VANGELISTA (Persona)
- LUCA LAMAGNA (Persona)
- ROBERTO FALLICA (Persona)
- http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID22878
- ROBERTA CIPRIAN (Unità di personale esterno)
- http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID24310
- http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID24456
- Ha afferente
- Rapporto con persona
- Employment relationship with CNR of ING. ALESSIO LAMPERTI (Rapporto con CNR)
