ECS Journal of Solid State Science and Technology
- Label
- ECS Journal of Solid State Science and Technology (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Pattern Transfer of Nanomasks Based on Diblock Copolymers Self-Assembling through Reactive Ion Etching (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Investigation of Ag-assisted chemical etching on (100) and (111) contiguous silicon surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Role of F on the Electrical Activation of As in Ge (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Electroless deposition of silver investigated with rutherford backscattering and electron microscopy (Articolo in rivista) (Prodotto della ricerca)
- Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications (Articolo in rivista) (Prodotto della ricerca)
- Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate (Articolo in rivista) (Prodotto della ricerca)
- Language
- eng (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#issn
- 2162-8769 (literal)
- Preferred label
- ECS Journal of Solid State Science and Technology (literal)
- Publisher
- The Electrochemical Society Pennington / New Jersey / USA USA (literal)
Incoming links:
- Rivista
- Pattern Transfer of Nanomasks Based on Diblock Copolymers Self-Assembling through Reactive Ion Etching (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Impact of the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces on the Behavior of 4H-SiC MOSFETs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Investigation of Ag-assisted chemical etching on (100) and (111) contiguous silicon surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Role of F on the Electrical Activation of As in Ge (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications (Articolo in rivista) (Prodotto della ricerca)
- Electroless deposition of silver investigated with rutherford backscattering and electron microscopy (Articolo in rivista) (Prodotto della ricerca)
- Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate (Articolo in rivista) (Prodotto della ricerca)
- Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- A viable route to enhance permittivity of gate dielectrics on In 0.53Ga0.47As(001): Trimethylaluminum-based atomic layer deposition of MeO2 (Me = Zr, Hf) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Structural and electrical properties of terbium scandate films deposited by atomic layer deposition and high temperature annealing effects (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)