Materials Science Forum
- Label
- Materials Science Forum (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- On the \"Step Bunching\" Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Ar annealing at 1600°C and 1650°C of Al+ implanted p+/n 4H-SiC diodes: analysis of the J-V characteristics versus annealing temperature (Articolo in rivista) (Prodotto della ricerca)
- Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer (Articolo in rivista) (Prodotto della ricerca)
- Language
- eng (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#issn
- 1662-9752 (literal)
- Preferred label
- Materials Science Forum (literal)
- Publisher
- Trans Tech Publications Durnten-Zurich, Switzerland USA (literal)
Incoming links:
- Rivista
- Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer (Articolo in rivista) (Prodotto della ricerca)
- Ar annealing at 1600°C and 1650°C of Al+ implanted p+/n 4H-SiC diodes: analysis of the J-V characteristics versus annealing temperature (Articolo in rivista) (Prodotto della ricerca)
- On the \"Step Bunching\" Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)