Semiconductor science and technology

Label

• Semiconductor science and technology (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors (Articolo in rivista) (Prodotto della ricerca)
• Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductors (Articolo in rivista) (Prodotto della ricerca)
• Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data. (Articolo in rivista) (Prodotto della ricerca)
• Lattice strain induced by boron clusters in crystalline silicon (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Charge pumping in InAs nanowires by surface acoustic waves (Articolo in rivista) (Prodotto della ricerca)
• Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• The Mn site in Mn-doped GaAs nanowires: an EXAFS study (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Temperature and current dependence of the optical intensity and energy shift in blue InGaN based LEDs: comparison between electroluminescence and cathodoluninescence (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Lattice strain induced by boron clusters in crystalline silicon (Articolo in rivista) (Prodotto della ricerca)
• Experimental analysis of a BMFET light intensity modulator: from static distributions to the carrier plasma dynamic and electro-optical device performance (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Electronic properties of quantum dot systems realized in semiconductor nanowires (Articolo in rivista) (Prodotto della ricerca)
• Effects of extreme dc-ageing and electron-beam irradiation in InGaN/AlGaN/GaN light-emitting diodes (Articolo in rivista) (Prodotto della ricerca)
• Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 mu m (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of thermal annealing on the optical properties of inganas/gaas multiple quantum wells (Articolo in rivista) (Prodotto della ricerca)
• Fully implanted vertical p-i-n diodes using high-purity semi-insulating 4H-SiC wafers (Articolo in rivista) (Prodotto della ricerca)
• Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications (Articolo in rivista) (Prodotto della ricerca)
• High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• The challenge of high-performance selective emitters for thermophotovoltaic applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• X-ray absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Crossbar architecture for tera scale integration (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires (Articolo in rivista) (Prodotto della ricerca)
• Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Relationship between structural and optoelectronic properties in semiconducting polymers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits (Articolo in rivista) (Prodotto della ricerca)
• Electrical transport and depletion region in dry-etched Si-based nanostructures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Charge transport in pentacene and porphyrin-based organic thin film (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Erbium-oxygen interactions in crystalline silicon (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• A silicon compatible resonant cavity enhanced photodetector working at 1.55 mu m (Articolo in rivista) (Prodotto della ricerca)
• Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing (Articolo in rivista) (Prodotto della ricerca)
• Scanning transmission electron microscopy determination of critical InAs QD parameters from high-quality focused ion beam lamellas (Articolo in rivista) (Prodotto della ricerca)

Alternative label

• Semiconductor science and technology. (literal)
• Semicond. sci. technol. (literal)

Language

• eng (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#issn

• 0268-1242 (literal)

Preferred label

• Semiconductor science and technology (literal)

Publisher

• Institute of Physics, London : GBR (literal)

Incoming links:

Rivista

• Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 mu m (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Lattice strain induced by boron clusters in crystalline silicon (Articolo in rivista) (Prodotto della ricerca)
• Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits (Articolo in rivista) (Prodotto della ricerca)
• High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Oxidation kinetics of AlAs and (AlGa)As layers in GaAs-based diode laser structures: comparative analysis of available experimental data. (Articolo in rivista) (Prodotto della ricerca)
• Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of extreme dc-ageing and electron-beam irradiation in InGaN/AlGaN/GaN light-emitting diodes (Articolo in rivista) (Prodotto della ricerca)
• The challenge of high-performance selective emitters for thermophotovoltaic applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires (Articolo in rivista) (Prodotto della ricerca)
• Erbium-oxygen interactions in crystalline silicon (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Temperature and current dependence of the optical intensity and energy shift in blue InGaN based LEDs: comparison between electroluminescence and cathodoluninescence (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• X-ray absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of thermal annealing on the optical properties of inganas/gaas multiple quantum wells (Articolo in rivista) (Prodotto della ricerca)
• A silicon compatible resonant cavity enhanced photodetector working at 1.55 mu m (Articolo in rivista) (Prodotto della ricerca)
• Crossbar architecture for tera scale integration (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Optical characterization of radiative deep centres in 6H-SiC junction field effect transistors (Articolo in rivista) (Prodotto della ricerca)
• Experimental analysis of a BMFET light intensity modulator: from static distributions to the carrier plasma dynamic and electro-optical device performance (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Charge pumping in InAs nanowires by surface acoustic waves (Articolo in rivista) (Prodotto della ricerca)
• Electronic properties of quantum dot systems realized in semiconductor nanowires (Articolo in rivista) (Prodotto della ricerca)
• Scanning transmission electron microscopy determination of critical InAs QD parameters from high-quality focused ion beam lamellas (Articolo in rivista) (Prodotto della ricerca)
• Advanced methods for the analysis of x-ray absorption spectroscopy data applied to semiconductors (Articolo in rivista) (Prodotto della ricerca)
• Lattice strain induced by boron clusters in crystalline silicon (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Relationship between structural and optoelectronic properties in semiconducting polymers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• The Mn site in Mn-doped GaAs nanowires: an EXAFS study (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Charge transport in pentacene and porphyrin-based organic thin film (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications (Articolo in rivista) (Prodotto della ricerca)
• Electrical transport and depletion region in dry-etched Si-based nanostructures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Fully implanted vertical p-i-n diodes using high-purity semi-insulating 4H-SiC wafers (Articolo in rivista) (Prodotto della ricerca)
• Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing (Articolo in rivista) (Prodotto della ricerca)
• Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)