Materials science forum

Label

• Materials science forum (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Supersonic cluster beam synthesis of nanostructured materials (Articolo in rivista) (Prodotto della ricerca)
• The influence of an ultrathin pseudomorphic interface control layer of Si on the growth of SrF2 on GaAs (Articolo in rivista) (Prodotto della ricerca)
• Effect of superficial residual stresses in abrasive wear resistance of Al2O3 /Al2O3+3Y-TZP multilayers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Impact of surface morphology on the electrical properties of Al/Ti Ohmic contacts on Al-implanted 4H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Post-implantation annealing of SiC: relevance of the heating rate (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Strain field analysis of 3C-SiC free-standing microstructures by micro-Raman and theoretical modelling (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Evolution of the electrical behaviour of GaN and AlGaN materials after high temperature annealing and thermal oxidation (Articolo in rivista) (Prodotto della ricerca)
• Non destructive characterization of phase distribution and residual strain/stress map of two ancient (Koto) age Japanese swords (Articolo in rivista) (Prodotto della ricerca)
• Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• SiC epitaxial growth on Si(100) substrates using carbon tetrabromide (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Post-implantation annealing in a silane ambient using hot wall CVD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Work Hardening and Tensile Behaviour of an Austenitic Stainless Steel at High Temperature (Articolo in rivista) (Prodotto della ricerca)
• J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Comparision between roll diffusion bonding and host isostatic pressing production processes of Ti6A14V-SiC f metal matrix composites (Articolo in rivista) (Prodotto della ricerca)
• Stress relaxation study in 3C-SiC microstructures by micro-raman analysis and finite element modeling (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• SiC Synthesis by fullerence free jets on Si(111) at low temperatures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Features on grain-structure evolution during asymmetric rolling ef aluminium alloys (Articolo in rivista) (Prodotto della ricerca)
• The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Microstructure evolution and aging kinetics of Al-Mg-Si and Al-Mg-Si-Sc alloys processed by ECAP (Articolo in rivista) (Prodotto della ricerca)
• Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Emission enhancement of SiC/SiO2 core/shell nanowires induced by the oxide shell (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Consideration on the thermal expansion of 3C-SiC epitaxial layer on Si substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• beta-SiC NWs grown on patterned and MEMS silicon substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Analysis of the work hardening behaviour of a AISI 316L stainless steel at high temperature (Articolo in rivista) (Prodotto della ricerca)
• SANS investigation of y' precipitate morphology evolution in creep exposed single crystals Ni base (Articolo in rivista) (Prodotto della ricerca)
• CuZr based shape memory alloys: Effect of Cr and Co on the martensitic transformation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Structural characterization of heteroepitaxial 3C-SiC (Articolo in rivista) (Prodotto della ricerca)
• Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose (Articolo in rivista) (Prodotto della ricerca)
• Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient (Articolo in rivista) (Prodotto della ricerca)
• Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy (Articolo in rivista) (Prodotto della ricerca)
• Microstructural and mechanical properties of UFG Silver subjected to severe plastic deformation by ECAP (Abstract/Comunicazione in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1106)
• Neutron strain scanning of archaeological bronzes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• X-ray and AFM analysis of Al2O3 deposited by ALCVD on n-type 4H-SiC (Contributo in atti di convegno) (Prodotto della ricerca)
• Ag growth on 3C-SiC(001) c(2x2) C-terminated and c(4x2) Si-terminated surfaces (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) (Articolo in rivista) (Prodotto della ricerca)
• 3C-SiC growth on (001) Si substrates by using a multilayer buffer (Articolo in rivista) (Prodotto della ricerca)
• Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Dental Implants of Complex Form Coated by Nanostructered TiO2 Thin Films via MOCVD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Behaviour of metallic samples subjected to external stresses during heating-cooling cycles. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Electrical activity of structural defects in 3C-SiC (Articolo in rivista) (Prodotto della ricerca)
• Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) (Articolo in rivista) (Prodotto della ricerca)
• Micro-chemistry and mechanical behaviour of Ti6A14V-SiCf composite produced by HIP for aeronautical applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Local electrical properties of the 4H-SiC(0001)/graphene interface (Articolo in rivista) (Prodotto della ricerca)
• Correlation between leakage current and ion-irradiation induced defects in 4H-SiC Schottky diodes (Articolo in rivista) (Prodotto della ricerca)
• Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET (Articolo in rivista) (Prodotto della ricerca)
• Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET (Articolo in rivista) (Prodotto della ricerca)
• Organometallic compounds as precursors for chemical vapor deposition of thin films of inorganic materials (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Towards Large Area (111)3C-SiC Films Grown on off-oriented (111)Si (Articolo in rivista) (Prodotto della ricerca)
• Defects in High Energy Ion Irradiated 4H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC (Articolo in rivista) (Prodotto della ricerca)
• Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Young's Modulus Profile in Kolsterized AISI 316L Steel (Articolo in rivista) (Prodotto della ricerca)
• Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Origin of the current transport anisotropy in epitaxial graphene grown on vicinal 4H-SiC (0001) surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Plasma Treatment of 3C-SiC Surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Structural characterization of 3C-SiC grown using methyltrichlorosilane (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Mechanical proprieties and residual stress evaluation on heteroepitaxial 3C-SiC/Si for MEMS application (Articolo in rivista) (Prodotto della ricerca)
• Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications (Articolo in rivista) (Prodotto della ricerca)
• SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate. (Articolo in rivista) (Prodotto della ricerca)
• Selective beta-SiC/SiO2 core-shell NW growth on patterned silicon substrate (Articolo in rivista) (Prodotto della ricerca)
• Monte carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Raman stress characterization of hetero-epitaxial 3C-SiC free standing structures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Advanced stress analysis by micro-structures realization on high quality hetero-epitaxial 3C-SiC for MEMS application (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Raman study of bulk mobility in 3C-SiC heteroepitaxy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Modelling Tensile Curves of AISI 316L at High Temperatures Starting from Strain Hardening Analysis (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Investigating X-ray Bragg-Line displacement as a technique for determination of the thermal expansion coefficient of solid samples. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Steady-state analysis of a normally-off 4H-SiC trench bipolar-mode FET (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Nanoscale characterization of SiC interfaces and devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions (Articolo in rivista) (Prodotto della ricerca)
• Theoretical monte carlo study of the formation and evolution of defects in the homoepitaxial growth of SiC (Articolo in rivista) (Prodotto della ricerca)
• Kinetics of the decomposition of crocidolite asbestos: a preliminary real-time X-Ray Powder Diffraction study. (Articolo in rivista) (Prodotto della ricerca)
• SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Strength distributions of ceramic laminates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Reduction of the surface density of single Shockley faults by TCS growth process (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Optimisation of epitaxial layer growth by Schottky diodes electrical characterization (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Evolution of extended defects during epitaxial growths: A Monte Carlo study (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface (Contributo in atti di convegno) (Prodotto della ricerca)
• Deposition of nanocrystalline metal films by cluster beams produced by a pulsed arc cluster ion source (Articolo in rivista) (Prodotto della ricerca)
• Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation (Articolo in rivista) (Prodotto della ricerca)
• Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Potentialities of nickel oxide as dielectric for GaN and SiC devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Solving Crystal Structures from Powder Data: The Use of a Molecular Fragment (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC (Articolo in rivista) (Prodotto della ricerca)
• Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces (Articolo in rivista) (Prodotto della ricerca)
• Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Comparison Between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Numerical simulations of a 4H-SiC BMFET power transistor with normally-off characteristics (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Improving doping efficiency of P(+) implanted ions in 4H-SiC (Contributo in atti di convegno) (Prodotto della ricerca)
• Monte Carlo study of the early growth stages of 3C-SiC on misoriented < 11-20 > and < 1-100 > 6H-SiC substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature (Contributo in atti di convegno) (Prodotto della ricerca)
• n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Al/Al2O3 nano-composite produced by ECAP (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Silicon Carbide and Related Materials 2004 (Curatela) (Prodotto della ricerca)
• Thickness determination of thin polycrystalline film by grazing incidence X-ray diffraction (Articolo in rivista) (Prodotto della ricerca)
• Flow curve modelling of an austenitic stainless steel at high temperatures starting from the one-parameter model of strain hardening (Articolo in rivista) (Prodotto della ricerca)
• Phasing crystal structures from powder data: about the use of the Harker sections (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Toward EXPO: From the Powder Pattern to the Crystal Structure (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition (Articolo in rivista) (Prodotto della ricerca)
• Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane (Articolo in rivista) (Prodotto della ricerca)
• Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC (Articolo in rivista) (Prodotto della ricerca)
• Defect evolution in ion irradiated 6H-SiC epitaxial layers (Articolo in rivista) (Prodotto della ricerca)
• Effects of heat treatments on tungsten for armours in NFR (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Study of TiW/Au thin films as metallization stack for high temperature and harsh environment devices on 6H Silicon Carbide (Articolo in rivista) (Prodotto della ricerca)
• Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data (Articolo in rivista) (Prodotto della ricerca)
• Measurements of charge collection efficiency of p(+)/n junction SiC detectors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• 3C-SiC heteroepitaxy on (100), (111) and (110) Si using Trichlorosilane (TCS) as the silicon precursor (Articolo in rivista) (Prodotto della ricerca)
• Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation (Contributo in atti di convegno) (Prodotto della ricerca)
• Surface Properties of Ag-Cu-Zr liquid alloys in relation to the Wettability of Boride Ceramics (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Defects in He+ irradiated 6H-SiC probed by DLTS and LTPL measurements (Articolo in rivista) (Prodotto della ricerca)
• Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• A nanoscale look in the channel of 4H-SiC lateral MOSFETs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer (Contributo in atti di convegno) (Prodotto della ricerca)
• New achievements on CVD based methods for SIC epitaxial growth (Articolo in rivista) (Prodotto della ricerca)
• Long-term heat treatments on Ti6Al4V-SiCf composite. Part I - Microstructural characterization (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Discontinuous precipitation in a high-nitrogen austenitic steel (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Neutron and X-ray diffraction study of the SrCr8Ga4O19 Kagomé compound synthesized by citrate route (Articolo in rivista) (Prodotto della ricerca)
• Study of the high frequency dielectric properties of SrBi2Ta2O9 ferroelectric thin films (Articolo in rivista) (Prodotto della ricerca)
• Epitaxial layers grown with HCl addition: A comparison with the standard process (Articolo in rivista) (Prodotto della ricerca)
• Modeling the transport phenomena of TiO2 nanoparticles in leachate of municipal waste landfills. (Articolo in rivista) (Prodotto della ricerca)
• Structural characterization of alloyed Al/Ti and Ti contacts on SiC (Articolo in rivista) (Prodotto della ricerca)
• SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature (Articolo in rivista) (Prodotto della ricerca)
• Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Organometallic Compounds as Precursors for Chemical Vapor Deposition of Thin Films of Inorganic Materials (Contributo in atti di convegno) (Prodotto della ricerca)
• Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers (Articolo in rivista) (Prodotto della ricerca)
• Planar Waveguides based on Nanocrystalline and Er3+ doped SnO2 (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• On the viability of Au/3C-SiC Schottky barrier diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Chemical vapor deposition of Cr-based thin films as diffusion barriers in copper metallization (Articolo in rivista) (Prodotto della ricerca)
• Structure and energy of the 90 degrees partial dislocations in Wurtzite-GaN (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Analysis of Creep Curves of Haynes 230 Superalloy (Articolo in rivista) (Prodotto della ricerca)
• Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier (Articolo in rivista) (Prodotto della ricerca)
• Thermal expansion and excess properties of akermanite-gehlenite synthetic solid solution series. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping (Articolo in rivista) (Prodotto della ricerca)
• Structural and magnetic properties of chemically deposited hexaferrites (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• SiC synthesis by fullerene free jets on Si(111) at low temperatures (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes (Articolo in rivista) (Prodotto della ricerca)
• Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Shape memory alloys: material modeling and device finite element simulations (Articolo in rivista) (Prodotto della ricerca)
• Residual Stress Measurement on Hetero-epitaxial 3C-SiC Films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Highly doped implanted pn junction for sic Zener diodes fabrication (Articolo in rivista) (Prodotto della ricerca)
• Thick Epitaxial Layers Growth by Chlorine Addition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Extended Study of the Step-bunching Mechanism During the Homoepitaxial Growth of SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• X-ray absorption study of local structure in nanophase palladium (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• First principles simulation of SiC-based interfaces (Articolo in rivista) (Prodotto della ricerca)
• Reliability of thin thermally grown SiO2 on 3C-SiC studied by scanning probe microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Incommensurate and commensurate structural modulation in martensitic phases of FSMA (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• A comparative study of the morphology of 3C-SiC grown at different C/Si ratios (Articolo in rivista) (Prodotto della ricerca)
• Low-temperature thermal oxidation of ion-amorphized 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Electron-induced damage effects in 4H-SiC Schottky diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Growth and characterization of Mg-based low dimensional systems for blue-green optoelectronics (Articolo in rivista) (Prodotto della ricerca)
• High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111) (Articolo in rivista) (Prodotto della ricerca)
• The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study (Articolo in rivista) (Prodotto della ricerca)
• C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. (Articolo in rivista) (Prodotto della ricerca)
• Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements (Articolo in rivista) (Prodotto della ricerca)
• Micro-Raman characterization of 4H-SiC stacking faults (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si1-xGex/Si(001) heterostructures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Quantitative high-resolution two-dimensional profiling of sic by scanning capacitance microscopy (Articolo in rivista) (Prodotto della ricerca)
• Electrical characterization of nickel silicide contacts on silicon carbide (Articolo in rivista) (Prodotto della ricerca)
• Carbon Nanotubes Grown by Catalytic CVD on Silicon Based Substrates for Electronics Applications (Articolo in rivista) (Prodotto della ricerca)
• Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier (Articolo in rivista) (Prodotto della ricerca)
• Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts (Articolo in rivista) (Prodotto della ricerca)
• Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• 4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6 (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• TEM and SEM-CL studies of SiC Nanowires (Articolo in rivista) (Prodotto della ricerca)
• Processing of CuZr based shape memory alloys (Contributo in atti di convegno) (Prodotto della ricerca)
• A highly effective edge termination design for SiC planar high power devices (Articolo in rivista) (Prodotto della ricerca)
• A comparative study of high temperature aluminium post implantation annealing in 6H and 4hsic, non-uniformity temperature effects (Articolo in rivista) (Prodotto della ricerca)
• Effect of the matrix on the 1.5 mm photoluminescence of Er-doped silicon quantum dots (Articolo in rivista) (Prodotto della ricerca)
• Physico-Chemical properties and performance of novel PEEK-WC membranes contacting human plasma and proteins (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Preparation and characterization of microporous membranes prepared by wet phase inversion. Application to Ni (II) transport (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Non Destructive Characterization of Phase Distribution and Residual Strain/Stress Map (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of growth parameters on SiC/SiO2 core/shell nanowires radial structures (Articolo in rivista) (Prodotto della ricerca)
• Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing (Articolo in rivista) (Prodotto della ricerca)
• Microstructure and transport properties in alloyed Ohmic contacts to p-type SiC and GaN for power devices applications (Articolo in rivista) (Prodotto della ricerca)
• Completion of Crystal Structure with Polyhedral Coordination: A New Procedure (Articolo in rivista) (Prodotto della ricerca)
• Effect of lead content and B-site substitutions on dielectric and piezoelectric properties of PZT ceramics (Articolo in rivista) (Prodotto della ricerca)
• Effects of Silica Nano-Particle Coatings on High-Temperature Oxidation of AISI 321 (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Structural characterization of Cu metallic clusters in amorphous SiO2 by synchrotron radiation grazing incidence X-ray scattering and diffraction (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates (Articolo in rivista) (Prodotto della ricerca)
• Supersonic cluster beam synthesis of nanostructured materials (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Al+ implanted 4H-SiC p(+)-i-n diodes: Evidence for post-implantation-annealing dependent defect activation (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Microwave annealing of Al+ implanted 4H-SiC: towards device fabrication (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Effects of a post-oxidation annealing in nitrous oxide on the morphological and electrical properties of SiO2/4H-SiC interfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Crystal Structures of Modulated Martensitic Phases of FSM Heusler Alloys (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Reverse Magnetostructural Transitions by Co and In Doping NiMnGa Alloys: Structural, Magnetic, and Magnetoelastic Properties (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC (Contributo in atti di convegno) (Prodotto della ricerca)
• Post-growth process effect on hetero-epitxial 3C-SiC wafer bow and residual stress (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Characterization of SiO2/SiC interfaces annealed in N2O or POCl3 (Articolo in rivista) (Prodotto della ricerca)
• Effects of Al ion implantation on 3C-SiC crystal structure (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Fast growth rate epitaxy by chloride precursors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Micro-Raman analysis of a micromachined 3C-SiC cantilever (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Electrochemical behaviour of Pt-TiO2 nanocomposites prepared by MOCVD in acidic aqueous solutions (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Nanophased CeO2 -ZrO2 solid-solution thin films deposited via CVD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)

Alternative label

• Mat. sci. forum (literal)
• Materials science forum (literal)

Language

• eng (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#issn

• 0255-5476 (literal)

Preferred label

• Materials science forum (literal)

Publisher

• Trans Tech Publications, Uetikon-Zürich : CHE (literal)

Incoming links:

Rivista

• Comparision between roll diffusion bonding and host isostatic pressing production processes of Ti6A14V-SiC f metal matrix composites (Articolo in rivista) (Prodotto della ricerca)
• Electrochemical behaviour of Pt-TiO2 nanocomposites prepared by MOCVD in acidic aqueous solutions (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Nanophased CeO2 -ZrO2 solid-solution thin films deposited via CVD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Thermal expansion and excess properties of akermanite-gehlenite synthetic solid solution series. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of Silica Nano-Particle Coatings on High-Temperature Oxidation of AISI 321 (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Features on grain-structure evolution during asymmetric rolling ef aluminium alloys (Articolo in rivista) (Prodotto della ricerca)
• Neutron strain scanning of archaeological bronzes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Investigating X-ray Bragg-Line displacement as a technique for determination of the thermal expansion coefficient of solid samples. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Kinetics of the decomposition of crocidolite asbestos: a preliminary real-time X-Ray Powder Diffraction study. (Articolo in rivista) (Prodotto della ricerca)
• Structural and magnetic properties of chemically deposited hexaferrites (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• New achievements on CVD based methods for SIC epitaxial growth (Articolo in rivista) (Prodotto della ricerca)
• Measurements of charge collection efficiency of p(+)/n junction SiC detectors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Characterization of a thermal oxidation process on SiC preamorphized by Ar ion implantation (Contributo in atti di convegno) (Prodotto della ricerca)
• Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC (Articolo in rivista) (Prodotto della ricerca)
• Defect evolution in ion irradiated 6H-SiC epitaxial layers (Articolo in rivista) (Prodotto della ricerca)
• SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature (Articolo in rivista) (Prodotto della ricerca)
• Structural characterization of alloyed Al/Ti and Ti contacts on SiC (Articolo in rivista) (Prodotto della ricerca)
• Reliability of thin thermally grown SiO2 on 3C-SiC studied by scanning probe microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Microstructure evolution and aging kinetics of Al-Mg-Si and Al-Mg-Si-Sc alloys processed by ECAP (Articolo in rivista) (Prodotto della ricerca)
• Analysis of the work hardening behaviour of a AISI 316L stainless steel at high temperature (Articolo in rivista) (Prodotto della ricerca)
• SANS investigation of y' precipitate morphology evolution in creep exposed single crystals Ni base (Articolo in rivista) (Prodotto della ricerca)
• Microstructural and mechanical properties of UFG Silver subjected to severe plastic deformation by ECAP (Abstract/Comunicazione in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1106)
• Non Destructive Characterization of Phase Distribution and Residual Strain/Stress Map (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• First principles simulation of SiC-based interfaces (Articolo in rivista) (Prodotto della ricerca)
• A comparative study of the morphology of 3C-SiC grown at different C/Si ratios (Articolo in rivista) (Prodotto della ricerca)
• Incommensurate and commensurate structural modulation in martensitic phases of FSMA (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• TEM and SEM-CL studies of SiC Nanowires (Articolo in rivista) (Prodotto della ricerca)
• A comparative study of high temperature aluminium post implantation annealing in 6H and 4hsic, non-uniformity temperature effects (Articolo in rivista) (Prodotto della ricerca)
• Quantitative high-resolution two-dimensional profiling of sic by scanning capacitance microscopy (Articolo in rivista) (Prodotto della ricerca)
• Electrical characterization of nickel silicide contacts on silicon carbide (Articolo in rivista) (Prodotto della ricerca)
• Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature (Contributo in atti di convegno) (Prodotto della ricerca)
• n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of epitaxial layer growth parameters on the defect density and on the electrical characteristics of Schottky diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer (Contributo in atti di convegno) (Prodotto della ricerca)
• Defects in He+ irradiated 6H-SiC probed by DLTS and LTPL measurements (Articolo in rivista) (Prodotto della ricerca)
• Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Study of TiW/Au thin films as metallization stack for high temperature and harsh environment devices on 6H Silicon Carbide (Articolo in rivista) (Prodotto della ricerca)
• Structure and energy of the 90 degrees partial dislocations in Wurtzite-GaN (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Evolution of the electrical behaviour of GaN and AlGaN materials after high temperature annealing and thermal oxidation (Articolo in rivista) (Prodotto della ricerca)
• Chemical vapor deposition of Cr-based thin films as diffusion barriers in copper metallization (Articolo in rivista) (Prodotto della ricerca)
• Completion of Crystal Structure with Polyhedral Coordination: A New Procedure (Articolo in rivista) (Prodotto della ricerca)
• Surface Properties of Ag-Cu-Zr liquid alloys in relation to the Wettability of Boride Ceramics (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Analysis of Creep Curves of Haynes 230 Superalloy (Articolo in rivista) (Prodotto della ricerca)
• Work Hardening and Tensile Behaviour of an Austenitic Stainless Steel at High Temperature (Articolo in rivista) (Prodotto della ricerca)
• SiC Synthesis by fullerence free jets on Si(111) at low temperatures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Behaviour of metallic samples subjected to external stresses during heating-cooling cycles. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Shape memory alloys: material modeling and device finite element simulations (Articolo in rivista) (Prodotto della ricerca)
• Study of the high frequency dielectric properties of SrBi2Ta2O9 ferroelectric thin films (Articolo in rivista) (Prodotto della ricerca)
• SiC epitaxial growth on Si(100) substrates using carbon tetrabromide (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effect of the matrix on the 1.5 mm photoluminescence of Er-doped silicon quantum dots (Articolo in rivista) (Prodotto della ricerca)
• Highly doped implanted pn junction for sic Zener diodes fabrication (Articolo in rivista) (Prodotto della ricerca)
• Low-temperature thermal oxidation of ion-amorphized 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Growth and characterization of Mg-based low dimensional systems for blue-green optoelectronics (Articolo in rivista) (Prodotto della ricerca)
• A highly effective edge termination design for SiC planar high power devices (Articolo in rivista) (Prodotto della ricerca)
• Ion-beam induced modifications of titanium Schottky barrier on 4H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts (Articolo in rivista) (Prodotto della ricerca)
• Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements (Articolo in rivista) (Prodotto della ricerca)
• Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier (Articolo in rivista) (Prodotto della ricerca)
• The role of the ion implanted emitter state on 6H-SiC power diodes behavior. A statistical study (Articolo in rivista) (Prodotto della ricerca)
• On the viability of Au/3C-SiC Schottky barrier diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effect of superficial residual stresses in abrasive wear resistance of Al2O3 /Al2O3+3Y-TZP multilayers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Thickness determination of thin polycrystalline film by grazing incidence X-ray diffraction (Articolo in rivista) (Prodotto della ricerca)
• Long-term heat treatments on Ti6Al4V-SiCf composite. Part I - Microstructural characterization (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Discontinuous precipitation in a high-nitrogen austenitic steel (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Preparation and characterization of microporous membranes prepared by wet phase inversion. Application to Ni (II) transport (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effect of lead content and B-site substitutions on dielectric and piezoelectric properties of PZT ceramics (Articolo in rivista) (Prodotto della ricerca)
• Carbon Nanotubes Grown by Catalytic CVD on Silicon Based Substrates for Electronics Applications (Articolo in rivista) (Prodotto della ricerca)
• High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111) (Articolo in rivista) (Prodotto della ricerca)
• C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes. (Articolo in rivista) (Prodotto della ricerca)
• Electron-induced damage effects in 4H-SiC Schottky diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Physico-Chemical properties and performance of novel PEEK-WC membranes contacting human plasma and proteins (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Non destructive characterization of phase distribution and residual strain/stress map of two ancient (Koto) age Japanese swords (Articolo in rivista) (Prodotto della ricerca)
• Planar Waveguides based on Nanocrystalline and Er3+ doped SnO2 (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose (Articolo in rivista) (Prodotto della ricerca)
• Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient (Articolo in rivista) (Prodotto della ricerca)
• Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy (Articolo in rivista) (Prodotto della ricerca)
• Towards Large Area (111)3C-SiC Films Grown on off-oriented (111)Si (Articolo in rivista) (Prodotto della ricerca)
• Defects in High Energy Ion Irradiated 4H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Atomistic and Continuum Simulations of the Homo-epitaxial Growth of SiC (Articolo in rivista) (Prodotto della ricerca)
• Characterization of Phosphorus Implanted n+/p Junctions Integrated as Source/drain Regions in a 4H-SiC n-MOSFET (Articolo in rivista) (Prodotto della ricerca)
• Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET (Articolo in rivista) (Prodotto della ricerca)
• Strength distributions of ceramic laminates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Residual Stress Measurement on Hetero-epitaxial 3C-SiC Films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Thick Epitaxial Layers Growth by Chlorine Addition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Extended Study of the Step-bunching Mechanism During the Homoepitaxial Growth of SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Silicon Carbide and Related Materials 2004 (Curatela) (Prodotto della ricerca)
• Selective beta-SiC/SiO2 core-shell NW growth on patterned silicon substrate (Articolo in rivista) (Prodotto della ricerca)
• Micro-chemistry and mechanical behaviour of Ti6A14V-SiCf composite produced by HIP for aeronautical applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers (Articolo in rivista) (Prodotto della ricerca)
• Flow curve modelling of an austenitic stainless steel at high temperatures starting from the one-parameter model of strain hardening (Articolo in rivista) (Prodotto della ricerca)
• beta-SiC NWs grown on patterned and MEMS silicon substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Emission enhancement of SiC/SiO2 core/shell nanowires induced by the oxide shell (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing (Articolo in rivista) (Prodotto della ricerca)
• Microstructure and transport properties in alloyed Ohmic contacts to p-type SiC and GaN for power devices applications (Articolo in rivista) (Prodotto della ricerca)
• Effects of growth parameters on SiC/SiO2 core/shell nanowires radial structures (Articolo in rivista) (Prodotto della ricerca)
• Supersonic cluster beam synthesis of nanostructured materials (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates (Articolo in rivista) (Prodotto della ricerca)
• Consideration on the thermal expansion of 3C-SiC epitaxial layer on Si substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Supersonic cluster beam synthesis of nanostructured materials (Articolo in rivista) (Prodotto della ricerca)
• Deposition of nanocrystalline metal films by cluster beams produced by a pulsed arc cluster ion source (Articolo in rivista) (Prodotto della ricerca)
• Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Schottky-Ohmic Transition in Nickel Sllicide/SiC System: Is it Really a Solved Problem? (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• A nanoscale look in the channel of 4H-SiC lateral MOSFETs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Modeling the transport phenomena of TiO2 nanoparticles in leachate of municipal waste landfills. (Articolo in rivista) (Prodotto della ricerca)
• Study of the effects of growth rate, miscut direction and postgrowth argon annealing on the surface morphology of homoepitaxially grown 4H silicon carbide films (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications (Articolo in rivista) (Prodotto della ricerca)
• Mechanical proprieties and residual stress evaluation on heteroepitaxial 3C-SiC/Si for MEMS application (Articolo in rivista) (Prodotto della ricerca)
• Raman stress characterization of hetero-epitaxial 3C-SiC free standing structures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Advanced stress analysis by micro-structures realization on high quality hetero-epitaxial 3C-SiC for MEMS application (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Raman study of bulk mobility in 3C-SiC heteroepitaxy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• 3C-SiC heteroepitaxy on (100), (111) and (110) Si using Trichlorosilane (TCS) as the silicon precursor (Articolo in rivista) (Prodotto della ricerca)
• Epitaxial layers grown with HCl addition: A comparison with the standard process (Articolo in rivista) (Prodotto della ricerca)
• Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping (Articolo in rivista) (Prodotto della ricerca)
• Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier (Articolo in rivista) (Prodotto della ricerca)
• Organometallic Compounds as Precursors for Chemical Vapor Deposition of Thin Films of Inorganic Materials (Contributo in atti di convegno) (Prodotto della ricerca)
• Correlation between leakage current and ion-irradiation induced defects in 4H-SiC Schottky diodes (Articolo in rivista) (Prodotto della ricerca)
• Solving Crystal Structures from Powder Data: The Use of a Molecular Fragment (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• X-ray absorption study of local structure in nanophase palladium (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Ag growth on 3C-SiC(001) c(2x2) C-terminated and c(4x2) Si-terminated surfaces (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Impact of substrate steps and of monolayer-bilayer junctions on the electronic transport in epitaxial graphene on 4H-SiC (0001) (Articolo in rivista) (Prodotto della ricerca)
• 3C-SiC growth on (001) Si substrates by using a multilayer buffer (Articolo in rivista) (Prodotto della ricerca)
• Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Potentialities of nickel oxide as dielectric for GaN and SiC devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Post-growth process effect on hetero-epitxial 3C-SiC wafer bow and residual stress (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of Al ion implantation on 3C-SiC crystal structure (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Fast growth rate epitaxy by chloride precursors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Micro-Raman analysis of a micromachined 3C-SiC cantilever (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Strain field analysis of 3C-SiC free-standing microstructures by micro-Raman and theoretical modelling (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Reduction of the surface density of single Shockley faults by TCS growth process (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Evolution of extended defects during epitaxial growths: A Monte Carlo study (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate. (Articolo in rivista) (Prodotto della ricerca)
• Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Influence of Thermal Annealing on Ohmic Contacts and Device Isolation in AlGaN/GaN Heterostructures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Phasing crystal structures from powder data: about the use of the Harker sections (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Toward EXPO: From the Powder Pattern to the Crystal Structure (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Electrical Characterization of Ion Implanted n + /p 6H-SiC Diodes (Articolo in rivista) (Prodotto della ricerca)
• Ion Implanted p(+)/n diodes: post-implantation annealing in a silane ambient in a cold-wall low-pressure CVD reactor (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Post-implantation annealing of SiC: relevance of the heating rate (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Post-implantation annealing in a silane ambient using hot wall CVD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Electrical activity of structural defects in 3C-SiC (Articolo in rivista) (Prodotto della ricerca)
• Temperature dependent structural evolution of graphene layers on 4H-SiC(0001) (Articolo in rivista) (Prodotto della ricerca)
• Local electrical properties of the 4H-SiC(0001)/graphene interface (Articolo in rivista) (Prodotto della ricerca)
• Effects of a post-oxidation annealing in nitrous oxide on the morphological and electrical properties of SiO2/4H-SiC interfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Impact of surface morphology on the electrical properties of Al/Ti Ohmic contacts on Al-implanted 4H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Investigation of interface abruptness in strained InAs/In0.53Ga0.47As quantum wells (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Improving doping efficiency of P(+) implanted ions in 4H-SiC (Contributo in atti di convegno) (Prodotto della ricerca)
• Monte carlo study of the hetero-polytypical growth of cubic on hexagonal silicon carbide polytypes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Stress relaxation study in 3C-SiC microstructures by micro-raman analysis and finite element modeling (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Structural characterization of heteroepitaxial 3C-SiC (Articolo in rivista) (Prodotto della ricerca)
• Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions (Articolo in rivista) (Prodotto della ricerca)
• Theoretical monte carlo study of the formation and evolution of defects in the homoepitaxial growth of SiC (Articolo in rivista) (Prodotto della ricerca)
• SiC-4H epitaxial layer growth using trichlorosilane (TCS) as silicon precursor (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Optimisation of epitaxial layer growth by Schottky diodes electrical characterization (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Comparison Between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC (Articolo in rivista) (Prodotto della ricerca)
• Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces (Articolo in rivista) (Prodotto della ricerca)
• Organometallic compounds as precursors for chemical vapor deposition of thin films of inorganic materials (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Young's Modulus Profile in Kolsterized AISI 316L Steel (Articolo in rivista) (Prodotto della ricerca)
• Modelling Tensile Curves of AISI 316L at High Temperatures Starting from Strain Hardening Analysis (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data (Articolo in rivista) (Prodotto della ricerca)
• The influence of an ultrathin pseudomorphic interface control layer of Si on the growth of SrF2 on GaAs (Articolo in rivista) (Prodotto della ricerca)
• Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation (Articolo in rivista) (Prodotto della ricerca)
• Comparison between chemical and electrical profiles in Al+ or N+ implanted and annealed 6H-SiC (Articolo in rivista) (Prodotto della ricerca)
• Structural characterization of Cu metallic clusters in amorphous SiO2 by synchrotron radiation grazing incidence X-ray scattering and diffraction (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Neutron and X-ray diffraction study of the SrCr8Ga4O19 Kagomé compound synthesized by citrate route (Articolo in rivista) (Prodotto della ricerca)
• SiC synthesis by fullerene free jets on Si(111) at low temperatures (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Dental Implants of Complex Form Coated by Nanostructered TiO2 Thin Films via MOCVD (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• CuZr based shape memory alloys: Effect of Cr and Co on the martensitic transformation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Processing of CuZr based shape memory alloys (Contributo in atti di convegno) (Prodotto della ricerca)
• Characterization of SiO2/SiC interfaces annealed in N2O or POCl3 (Articolo in rivista) (Prodotto della ricerca)
• Numerical simulations of a 4H-SiC BMFET power transistor with normally-off characteristics (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Origin of the current transport anisotropy in epitaxial graphene grown on vicinal 4H-SiC (0001) surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Effects of heat treatments on tungsten for armours in NFR (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• 4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6 (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Micro-Raman characterization of 4H-SiC stacking faults (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Analysis on 3C-SiC layer grown on pseudomorphic-Si/Si1-xGex/Si(001) heterostructures (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Crystal Structures of Modulated Martensitic Phases of FSM Heusler Alloys (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Plasma Treatment of 3C-SiC Surfaces (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Al/Al2O3 nano-composite produced by ECAP (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Steady-state analysis of a normally-off 4H-SiC trench bipolar-mode FET (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface (Contributo in atti di convegno) (Prodotto della ricerca)
• Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• X-ray and AFM analysis of Al2O3 deposited by ALCVD on n-type 4H-SiC (Contributo in atti di convegno) (Prodotto della ricerca)
• Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3 (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Curvature evaluation of Si/3C-SiC/Si hetero-structure grown by Chemical Vapor Deposition (Articolo in rivista) (Prodotto della ricerca)
• Evaluation of mechanical and optical properties of hetero-epitaxial single crystal 3C-SiC squared-membrane (Articolo in rivista) (Prodotto della ricerca)
• Reverse Magnetostructural Transitions by Co and In Doping NiMnGa Alloys: Structural, Magnetic, and Magnetoelastic Properties (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Structural characterization of 3C-SiC grown using methyltrichlorosilane (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Al+ implanted 4H-SiC p(+)-i-n diodes: Evidence for post-implantation-annealing dependent defect activation (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Microwave annealing of Al+ implanted 4H-SiC: towards device fabrication (Contributo in atti di convegno) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1301)
• Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC (Contributo in atti di convegno) (Prodotto della ricerca)
• Nanoscale characterization of SiC interfaces and devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Monte Carlo study of the early growth stages of 3C-SiC on misoriented < 11-20 > and < 1-100 > 6H-SiC substrates (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)