I.E.E.E. transactions on electron devices
- Label
- I.E.E.E. transactions on electron devices (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Silicon carbide pinch rectifiers using a dual-metal Ti/Ni2Si Schottky barrier (Articolo in rivista) (Prodotto della ricerca)
- Two-dimensional quantum effects in nanoscale MOSFET's (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Polysilicon Thin Film Transistor structures for kink-effect suppression (Articolo in rivista) (Prodotto della ricerca)
- A statistical model for SILC in Flash memories' (Articolo in rivista) (Prodotto della ricerca)
- Comprehensive investigation of statistical effects in nitride memories - Part I: Physics-based modelling (Articolo in rivista) (Prodotto della ricerca)
- Comprehensive investigation of statistical effects in nitride memories - Part II: Scaling analysis and impact on device performance (Articolo in rivista) (Prodotto della ricerca)
- Time response of two-dimensional gas-based vertical field metal-semiconductor-metal photodetectors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance (Articolo in rivista) (Prodotto della ricerca)
- Experimental evidences of carrier distribution and behavior in frequency in a BMFET modulator (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Low-Field Amorphous State Resistance and Threshold Voltage Drift in Chalcogenide Materials (Articolo in rivista) (Prodotto della ricerca)
- 2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Modeling of tunneling P/E for nanocrystal memories (Articolo in rivista) (Prodotto della ricerca)
- Fully Deformable Organic Thin-Film Transistors With Moderate Operation Voltage (Articolo in rivista) (Prodotto della ricerca)
- Morphological and Electrical Characterization of Electrically Trimmable Thin-Film Resistors (Articolo in rivista) (Prodotto della ricerca)
- A charge-modulated FET for detection of biomolecular processes: Conception, modeling, and simulation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Dark Current in Silicon Photomultiplier Pixels: Data and Model (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Field-emission breakdown and electromigration in insulated planar nanoscopic contacts (Articolo in rivista) (Prodotto della ricerca)
- Statistical model for random telegraph noise in Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime (Articolo in rivista) (Prodotto della ricerca)
- Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Numerical Simulation of Parasitic Resistance Effects in Polycrystalline Silicon TFTs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications (Articolo in rivista) (Prodotto della ricerca)
- Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells Part I: Experimental study (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Modeling of Short-Channel Effects in Organic Thin-Film Transistors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Tunable Spectral Responses in a Color-Sensitive CMOS Pixel for Imaging Applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Comprehensive analysis of random telegraph noise instability and its scaling in deca-nanometer Flash memories (Articolo in rivista) (Prodotto della ricerca)
- Integration of Melting Excimer Laser Annealing in Power MOS Technology (Articolo in rivista) (Prodotto della ricerca)
- Design considerations for a-Si:H/SiGe/Si heterojunction bipolar transistors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Defect generation statistics in thin gate oxides (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Electronic switching in phase-change memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Impact of correlated generation of oxide defects on SILC and breakdown distributions (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 mu m (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories (Articolo in rivista) (Prodotto della ricerca)
- Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Al+ Ions (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Optical and electrical characterization of GaAs-based high-speed and high-sensitivity delta-doped resonant cavity-enhanced HMSM photodetector (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Modeling of programming and read performance in phase-change memories-Part I: cell optimization and scaling (Articolo in rivista) (Prodotto della ricerca)
- Hot carrier-Induced Degradation of LDD Polysilicon TFTs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Semi-analytical model for the transient operation of gate-all-around charge-trap memories (Articolo in rivista) (Prodotto della ricerca)
- Voltage snapback in amorphous-GST memory devices: Transport model and validation (Articolo in rivista) (Prodotto della ricerca)
- 2Self-accelerated thermal dissolution model for reset programming in unipolar resistive switching memory (RRAM) devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells Part II: Physics-based modeling (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Study of multilevel programming in Programmable Metallization Cell (PMC) memory (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Silicon heterojunction solar cell: A new buffer layer concept with low-temperature epitaxial silicon (Articolo in rivista) (Prodotto della ricerca)
- Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells (Articolo in rivista) (Prodotto della ricerca)
- An analytical model for cylindrical thin-film transistors (Articolo in rivista) (Prodotto della ricerca)
- Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- An Unconventional Hybrid Variable Capacitor With a 2-D Electron Gas (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Theory and experiment of suppressed shot noise in stress induced leakage currents (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Modeling of programming and read performance in phase-change memories-Part II: program disturb and mixed-scaling approach (Articolo in rivista) (Prodotto della ricerca)
- Hot-carrier induced degradation of Gate Overlapped Lightly Doped Drain (GOLDD) polysilicon thin-film transistors (Articolo in rivista) (Prodotto della ricerca)
- Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Nanocrystal memory cell integration in a stand-alone 16-Mb NOR flash device (Articolo in rivista) (Prodotto della ricerca)
- Silicon planar technology for single-photon optical detectors (Articolo in rivista) (Prodotto della ricerca)
- Three-dimensional simulation of charge-trap memory programming - Part I: average behavior (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Three-dimensional simulation of charge-trap memory programming - Part II: variability (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Statistical profiling of SILC spot in Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Compact modeling of variability effects in nanoscale NAND Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Analysis of electrical characteristics of gate overlapped lightly doped drain (GOLDD) polysilicon thin film transistors with different LDD doping concentration. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Thin film bulk acoustic resonator gas sensor functionalized with a nanocomposite Langmuir-Blodgett layer of carbon nanotubes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Alternative label
- IEEE transactions on electron devices. (literal)
- IEEE trans. electron devices (literal)
- Electron devices (literal)
- Transactions on electron devices (literal)
- Language
- eng (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#issn
- 0018-9383 (literal)
- Preferred label
- I.E.E.E. transactions on electron devices (literal)
- Publisher
- Institute of Electrical and Electronics Engineers. New York, USA (literal)
Incoming links:
- Rivista
- Modeling of Short-Channel Effects in Organic Thin-Film Transistors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- A charge-modulated FET for detection of biomolecular processes: Conception, modeling, and simulation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Field-emission breakdown and electromigration in insulated planar nanoscopic contacts (Articolo in rivista) (Prodotto della ricerca)
- An analytical model for cylindrical thin-film transistors (Articolo in rivista) (Prodotto della ricerca)
- Thin film bulk acoustic resonator gas sensor functionalized with a nanocomposite Langmuir-Blodgett layer of carbon nanotubes (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- A statistical model for SILC in Flash memories' (Articolo in rivista) (Prodotto della ricerca)
- Two-dimensional quantum effects in nanoscale MOSFET's (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Modeling of tunneling P/E for nanocrystal memories (Articolo in rivista) (Prodotto della ricerca)
- Numerical Simulation of Parasitic Resistance Effects in Polycrystalline Silicon TFTs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Comprehensive analysis of random telegraph noise instability and its scaling in deca-nanometer Flash memories (Articolo in rivista) (Prodotto della ricerca)
- Modeling of programming and read performance in phase-change memories-Part I: cell optimization and scaling (Articolo in rivista) (Prodotto della ricerca)
- Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells Part II: Physics-based modeling (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- 2Self-accelerated thermal dissolution model for reset programming in unipolar resistive switching memory (RRAM) devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Study of multilevel programming in Programmable Metallization Cell (PMC) memory (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Data retention and program/erase sensitivity to the array background pattern in deca-nanometer NAND Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Threshold-voltage instability due to damage recovery in nanoscale NAND Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Compact modeling of variability effects in nanoscale NAND Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Three-dimensional simulation of charge-trap memory programming - Part I: average behavior (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Three-dimensional simulation of charge-trap memory programming - Part II: variability (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Theory and experiment of suppressed shot noise in stress induced leakage currents (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Silicon planar technology for single-photon optical detectors (Articolo in rivista) (Prodotto della ricerca)
- Nitrogen implantation to improve electron channel mobility in 4H SiC MOSFET (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications (Articolo in rivista) (Prodotto della ricerca)
- Hot-carrier induced degradation of Gate Overlapped Lightly Doped Drain (GOLDD) polysilicon thin-film transistors (Articolo in rivista) (Prodotto della ricerca)
- Statistical profiling of SILC spot in Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Analysis of electrical characteristics of gate overlapped lightly doped drain (GOLDD) polysilicon thin film transistors with different LDD doping concentration. (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Polysilicon Thin Film Transistor structures for kink-effect suppression (Articolo in rivista) (Prodotto della ricerca)
- Low-Field Amorphous State Resistance and Threshold Voltage Drift in Chalcogenide Materials (Articolo in rivista) (Prodotto della ricerca)
- Statistical model for random telegraph noise in Flash memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime (Articolo in rivista) (Prodotto della ricerca)
- Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells Part I: Experimental study (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Tunable Spectral Responses in a Color-Sensitive CMOS Pixel for Imaging Applications (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Fundamental limitations to the width of the programmed VT distribution of NOR Flash memories (Articolo in rivista) (Prodotto della ricerca)
- Semi-analytical model for the transient operation of gate-all-around charge-trap memories (Articolo in rivista) (Prodotto della ricerca)
- Design considerations for a-Si:H/SiGe/Si heterojunction bipolar transistors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Optical and electrical characterization of GaAs-based high-speed and high-sensitivity delta-doped resonant cavity-enhanced HMSM photodetector (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Silicon heterojunction solar cell: A new buffer layer concept with low-temperature epitaxial silicon (Articolo in rivista) (Prodotto della ricerca)
- Nanocrystal memory cell integration in a stand-alone 16-Mb NOR flash device (Articolo in rivista) (Prodotto della ricerca)
- Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Time response of two-dimensional gas-based vertical field metal-semiconductor-metal photodetectors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Single-Layer InAs Quantum Dots for High-Performance Planar Photodetectors Near 1.3 mu m (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Al+ Ions (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Defect generation statistics in thin gate oxides (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Electronic switching in phase-change memories (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Impact of correlated generation of oxide defects on SILC and breakdown distributions (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Optimization of the nonoverlap length in decanano MOS devices with 2-D QM simulations (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Hot carrier-Induced Degradation of LDD Polysilicon TFTs (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Modeling of programming and read performance in phase-change memories-Part II: program disturb and mixed-scaling approach (Articolo in rivista) (Prodotto della ricerca)
- Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Comprehensive investigation of statistical effects in nitride memories - Part I: Physics-based modelling (Articolo in rivista) (Prodotto della ricerca)
- Comprehensive investigation of statistical effects in nitride memories - Part II: Scaling analysis and impact on device performance (Articolo in rivista) (Prodotto della ricerca)
- Silicon carbide pinch rectifiers using a dual-metal Ti/Ni2Si Schottky barrier (Articolo in rivista) (Prodotto della ricerca)
- Experimental evidences of carrier distribution and behavior in frequency in a BMFET modulator (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Integration of Melting Excimer Laser Annealing in Power MOS Technology (Articolo in rivista) (Prodotto della ricerca)
- Morphological and Electrical Characterization of Electrically Trimmable Thin-Film Resistors (Articolo in rivista) (Prodotto della ricerca)
- 2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Dark Current in Silicon Photomultiplier Pixels: Data and Model (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- An Unconventional Hybrid Variable Capacitor With a 2-D Electron Gas (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Voltage snapback in amorphous-GST memory devices: Transport model and validation (Articolo in rivista) (Prodotto della ricerca)
- Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance (Articolo in rivista) (Prodotto della ricerca)
- Fully Deformable Organic Thin-Film Transistors With Moderate Operation Voltage (Articolo in rivista) (Prodotto della ricerca)
- Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells (Articolo in rivista) (Prodotto della ricerca)