Microstructural analysis of Ga-Zn Oxide thin films for gas sensing (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Microstructural analysis of Ga-Zn Oxide thin films for gas sensing (Contributo in atti di convegno) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Alternative label

• Trinchi A., Li Y.X., Galatsis K., Wlodarski W., Kaciulis S., Pandolfi L., Comini E., Sberveglieri G. (2003)
  Microstructural analysis of Ga-Zn Oxide thin films for gas sensing
  in International Workshop on New Developments on Sensors for Environmental Control, ENVSENS, Lecce, Italy, 27-29 May 2002
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Trinchi A., Li Y.X., Galatsis K., Wlodarski W., Kaciulis S., Pandolfi L., Comini E., Sberveglieri G. (literal)

Pagina inizio

• 114 (literal)

Pagina fine

• 118 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Sensors for Environmental Control (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• World Scientific Publishing, Singapore, ISBN 981-238-338-7, 2003, p. 114-118. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• RMIT University, Melbourne, Australia University of Brescia, Sensor Lab ISMN - CNR, Rome, Italy (literal)

Titolo

• Microstructural analysis of Ga-Zn Oxide thin films for gas sensing (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 981-238-338-7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Siciliano P. (literal)

Abstract

• Gallium oxide - zinc oxide (Ga-2(3)O-ZnO) metal oxide thin films have been prepared by the sol-gel process and their oxygen gas sensing performance has been investigated. These films were deposited on alumina transducers with interdigital electrodes for gas sensing measurements and on single crystal silicon substrates for microcharacterization. X-ray Photoelectron Spectroscopy showed that the actual concentrations in Ga-Zn oxide thin films differ from the nominal values in the prepared solutions as a function of annealing temperature. Furthermore, the concentration of Zn decreases with a rise of sample annealing temperature. It was found that by increasing the amount of ZnO in the thin film sensors, their operating temperature decreased as well as the base resistance. In addition, the sensors prepared with 40 at. % of Zn showed the largest response and preferred oxygen sensing at operating temperatures from 380 to 420C. (literal)

Editore

• World Scientific Publishing Co. Pte. Ltd. (Editore)

Prodotto di

• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)

Autore CNR

• SAULIUS KACIULIS (Persona)
• ELISABETTA COMINI (Unità di personale esterno)

Incoming links:

Prodotto

• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)

Autore CNR di

• ELISABETTA COMINI (Unità di personale esterno)
• SAULIUS KACIULIS (Persona)

Editore di

• World Scientific Publishing Co. Pte. Ltd. (Editore)