http://www.cnr.it/ontology/cnr/individuo/prodotto/ID93785
Theoretical modeling of Te doped CoSb3 (Contributo in atti di convegno)
- Type
- Label
- Theoretical modeling of Te doped CoSb3 (Contributo in atti di convegno) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1109/ICT.2003.1287455 (literal)
- Alternative label
Bertini L., Billquist K., Christensen M., Gatti C., Holmgren L., Iversen B., Mueller E., Muhammed M., Noriega G., Palmqvist A., Platzek D., Rowe D.M., Saramat A., Stiewe C., Toprak M., Williams S.G., Zhang Y. (2003)
Theoretical modeling of Te doped CoSb3
in XXII Int. Conf. on Thermoelectrics (2003), La Grande Motte, Francia, 17-21 Aug. 2003
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Bertini L., Billquist K., Christensen M., Gatti C., Holmgren L., Iversen B., Mueller E., Muhammed M., Noriega G., Palmqvist A., Platzek D., Rowe D.M., Saramat A., Stiewe C., Toprak M., Williams S.G., Zhang Y. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- Proceedings ICT'03. 22nd International Conference on Thermoelectrics (IEEE Cat. No.03TH8726) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
- IEEE Cat. No.03TH8726 (literal)
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- Proceedings, pages 85-88, IEEE Catalog Number 03TH8726, ISBN 0-7803-8301-X, ISSN 1094-2734. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
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- L. Bertini,1 G. Borot,3 K. Billquist,2 M. Christensen,4 C. Gatti,1 L. Holmgren,5 B. Iversen,4 E. Mueller,6 M. Muhammed,2
G. Noriega,7 A. Palmqvist,8 D. Platzek,6 D.M. Rowe,9 A. Saramat,8 C. Stiewe,6 M. Toprak,2 S.G. Williams,9 Y. Zhang.2
1 Istituto di Scienze e Tecnologie Molecolari (ISTM), Via Camillo Golgi 19, 20133 Milano, Italy
2 Royal Institute of Technology, Materials Chemistry Division, SE-10044 Stockholm, Sweden
3 Ecole Polytechnique de l'Université de Grenoble Département SciGMa, Grenoble, France
4 University of Aarhus, Department of Chemistry, DK-8000 C Aarhus, Denmark
5 LEGELAB, SE-451 44 Uddevalla, Sweden
6 German Aerospace Center (DLR), Institute of Materials Research, D-51170 Cologne, Germany
7 CIDETE Ingenieros SL, E-08800 Vilanova (Barcelona), Spain
8 Chalmers University of Technology, Dept. Applied Surface Chemistry, Goteborg, Sweden
9 NEDO Laboratory for Thermoelectric Engineering (NEDO), Cardiff, UK (literal)
- Titolo
- Theoretical modeling of Te doped CoSb3 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
- Abstract
- The electronic structure of the Te doped CoSb 3 skutterudite is investigated by means of fully periodic density functional theory (DFT) calculations. Since the geometrical structure of a material may strongly affect its properties, Te substituted for Sb (Co 4Sb 11Te) and Te fully filled (TeCo 4Sb 12) cobalt skutterudite are both studied in order to understand where Te atom is sitting. From the analysis of the geometry and electronic structure properties, the Te filled system is ruled out. The extent of the change transfer among Co, Sb and Te atoms is evaluated using the Quantum Theory of Atom in Molecules (QTAIM). Te substitution for Sb yields a conductor with Fermi energy lying in the conduction bands zone of unsubstituted CoSb 3. The Seebeck coefficient S and the electrical conductivity sigma are calculated using the semiclassical Boltzmann monoelectronic transport theory. Computed S values agree with experimental evaluations on nanostructured Te doped CoSb 3 samples when the frozen band approximation is used for low Te doping and the Co 4Sb 11Te band structure is adopted for high Te content (literal)
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