Defective aluminium nitride nanotubes: a new way for spintronics? A density functional study (Articolo in rivista)

Type
Label
  • Defective aluminium nitride nanotubes: a new way for spintronics? A density functional study (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Simeoni, M; Santucci, S; Picozzi, S; Delley, B (2006)
    Defective aluminium nitride nanotubes: a new way for spintronics? A density functional study
    in Nanotechnology (Bristol. Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Simeoni, M; Santucci, S; Picozzi, S; Delley, B (literal)
Pagina inizio
  • 3166 (literal)
Pagina fine
  • 3174 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 17 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Aquila, INFM, CNR, I-67010 Coppito, Italy; Univ Aquila, Dept Phys, I-67010 Coppito, Italy; Paul Scherrer Inst, WHGA, CH-5232 Villigen, Switzerland (literal)
Titolo
  • Defective aluminium nitride nanotubes: a new way for spintronics? A density functional study (literal)
Abstract
  • The structural and electronic properties ( in terms of Mulliken charges, density of states and band structures) of pristine and defective ( 10, 0) AlN nanotubes have been calculated within density functional theory. The results show that, in several defective tubes, a spontaneous spin-polarization arises, due to the presence of spin-split flat bands close to the Fermi level, with a strong localization of the corresponding electronic states and of the magnetic moments. The highest positive spin-magnetization ( 3 mu(B) per cell) is found for the vacancy in the Al site, while the other magnetic tubes ( the vacancy in N, C and O substitutional for N and Al, respectively) show a magnetization of only 1 mu(B) per cell. The spontaneous magnetization of some defective tubes might open the way to their use for spintronic applications. (literal)
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