Optical characterization of bulk mobility in 3C-SiC films grown on different orientation of Si substrates (Contributo in atti di convegno)

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  • Optical characterization of bulk mobility in 3C-SiC films grown on different orientation of Si substrates (Contributo in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Piluso N, Severino A, Camarda M, Canino A, La Magna A, La Via F (2010)
    Optical characterization of bulk mobility in 3C-SiC films grown on different orientation of Si substrates
    in Conference of the E-MRS Symposium F, Strasbourg, France
    (literal)
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  • Piluso N, Severino A, Camarda M, Canino A, La Magna A, La Via F (literal)
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  • Raman microscopy has been used to study the carrier concentration and mobility in n-doped 3C-SiC epilayersgrown on different silicon substrates, namely (100) Si and (111) Si on axis and off-axis towards the [110] direction. By analyzing the longitudinal optical phonon-plasmon coupled mode (LOPC), we were able to estimate the 3C-SiC electron bulk mobility (p) within the range between 5 and 500 cm(2)/Vs. The carrier concentration (n) was ranging from 2 x 10(16) to 6 x 10(18) cm(-3). The observed trend shows a reduction in the electron mobility as the carrier concentration increases for films grown on any substrate considered, accordingly to the existent theory. For equal values of doping concentration, 3C-SiC epitaxial films grown on (100) Si substrates show a higher mobility than films grown on (111) Si counterparts. This could be ascribed to a higher defect density in (111) Si samples. A deeper characterization by performing Raman maps shows a broadening and a splitting of the 3C-SiC transverse optical (TO) peaks for the (111) Si samples, confirming a lower crystal quality than the (100) Si. (literal)
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  • IMM-CNR (literal)
Titolo
  • Optical characterization of bulk mobility in 3C-SiC films grown on different orientation of Si substrates (literal)
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