Lattice strain induced by boron clusters in crystalline silicon (Articolo in rivista)

Type
Label
  • Lattice strain induced by boron clusters in crystalline silicon (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Bisognin, G; De Salvador, D; Napolitani, E; Carnera, A; Bruno, E; Mirabella, S; Priolo, F; Mattoni, A (2006)
    Lattice strain induced by boron clusters in crystalline silicon
    in Semiconductor science and technology (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bisognin, G; De Salvador, D; Napolitani, E; Carnera, A; Bruno, E; Mirabella, S; Priolo, F; Mattoni, A (literal)
Pagina inizio
  • L41 (literal)
Pagina fine
  • L44 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 21 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Padua, CNR, INFM, MATIS, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; Univ Catania, CNR, INFM, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; Univ Cagliari, CNR, INFM, SLACS Sardinian Lab Computat Mat Sci, I-09042 Monserrato, Ca, Italy; Univ Cagliari, Dipartimento Fis, I-09042 Monserrato, Ca, Italy (literal)
Titolo
  • Lattice strain induced by boron clusters in crystalline silicon (literal)
Abstract
  • We studied the strain induced in a silicon lattice by the presence of boron clusters formed by the interaction of high concentration (2 x 10(20) at cm(-3)) substitutional B with Si interstitials produced by ion implantation. We found that the clustered immobile B induces a significant amount of strain in the host lattice. By analysing the dissolution behaviour of boron clusters after prolonged annealing, we found that the strain linearly decreases as the amount of clustered B decreases, evidencing a constant lattice expansion Delta V per clustered B atom of (3.7 +/- 0.6) angstrom(3), independently of the annealing temperature and time. By performing model potential calculations of Delta V on selected boron clusters, we concluded that these clusters can be structurally more complex than those commonly assumed or hypothesized so far. (literal)
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