Recent Insights in the Diffusion of Boron in Silicon and Germanium (Contributo in atti di convegno)

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  • Recent Insights in the Diffusion of Boron in Silicon and Germanium (Contributo in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/1.3485691 (literal)
Alternative label
  • Mirabella S, De Salvador D, Bruno E, Napolitani E, Scapellato GG, Mastromatteo M, Impellizzeri G, Bisognin G, Boninelli S, Terrasi A, Carnera A, Priolo F (2010)
    Recent Insights in the Diffusion of Boron in Silicon and Germanium
    in 218th ECS Meeting, High Purity Silicon 11, Las Vegas (USA)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mirabella S, De Salvador D, Bruno E, Napolitani E, Scapellato GG, Mastromatteo M, Impellizzeri G, Bisognin G, Boninelli S, Terrasi A, Carnera A, Priolo F (literal)
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  • 167 (literal)
Pagina fine
  • 178 (literal)
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  • 33 (literal)
Rivista
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  • 10 (literal)
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  • 11 (literal)
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  • Boron is the main p-type dopant in Si and in Ge and its diffusion is strictly related to the purity of the hosting lattice since it is dominated by the point defects in both the cases. Actually, the atomistic mechanism of B diffusion has been revealed to different extents in the two cases, since in Si it has been widely investigated for more than 40 years attaining a very deep comprehension, while in Ge it is the subject of a currently expanding scientific debate. Recently, the experimental data and the associated picture of B transport in the two materials are disclosing many common aspects and similarities, some of which will be reported in this talk. (literal)
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  • 1. MATIS-IMM-CNR 2. Dip. Fisica e Astronomia, Catania University,Via S. Sofia 64, 95123 Catania, ITALY 3. Dip. di Fisica, Padova University,Via Marzolo 8, 35131 Padova,ITALY (literal)
Titolo
  • Recent Insights in the Diffusion of Boron in Silicon and Germanium (literal)
Abstract
  • Experimental evidences and microscopic modelling of the mechanism of B diffusion in Si and Ge are given. In both the lattices B migrates by the mediation of self-interstitials (Is). In Si, B diffusion occurs mainly through the formation of a BI0 complex, after interactions of BS - with I0 or with I++ in intrinsic condition or high hole densities, respectively, followed by a proper charge exchange. A small contribution of the BI- complex is visible only under n-type doping, when BS - and I0 bind nonetheless the pairing of B with the n-dopants. Also in Ge, the B diffusion mechanism has been fixed, even if to a lower extent, revealing the need of selfinterstitials to start the B motion. We evidenced the occurrence of the proton radiation enhanced diffusion (RED) and of the transient enhanced diffusion (TED) of B, modeling both the cases with the central role of Is. (literal)
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