Investigation of the impacts of channel length, fin width on Si-NC SOI-FinFlash memory characteristics (Contributo in atti di convegno)

Type
Label
  • Investigation of the impacts of channel length, fin width on Si-NC SOI-FinFlash memory characteristics (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Jahan C, Razafindramora J, Perniola L, Gély M, Vizioz C, Toffoli A, Allain F, Lombardo S, Bongiorno C, Reimbold G, Boulanger F, De Salvo B, Deleonibus S (2007)
    Investigation of the impacts of channel length, fin width on Si-NC SOI-FinFlash memory characteristics
    in International Conference on Memory Technology and Design, Peninsula of Giens (France)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Jahan C, Razafindramora J, Perniola L, Gély M, Vizioz C, Toffoli A, Allain F, Lombardo S, Bongiorno C, Reimbold G, Boulanger F, De Salvo B, Deleonibus S (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • This paper presents the technological process and electrical behaviour of Silicon Nano-Crystal (Si-NC) FinFlash memories fabricated on Silicon On Insulator (SOI) substrates. We study ultra-scaled memory devices (with channel length, LG, and fin width, WFIN, down to few decananometers), with Si-NC storage nodes fabricated either by LPCVD or by annealing of Silicon-Rich-Oxide, under different electrical configurations (NAND and NOR schemes). (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CEA-LETI; CNR-IMM Catania (literal)
Titolo
  • Investigation of the impacts of channel length, fin width on Si-NC SOI-FinFlash memory characteristics (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
data.CNR.it