Laser annealing of a-Si for realization of polycrystalline Si film on plastic substrate (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Laser annealing of a-Si for realization of polycrystalline Si film on plastic substrate (Contributo in atti di convegno) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• Mangano F, Caristia L, Costa N, Camalleri M, Ravesi S, Scalese S, Bagiante S, Privitera V (2007)
  Laser annealing of a-Si for realization of polycrystalline Si film on plastic substrate
  in 15th International Conference on Advanced Thermal Processing of Semiconductors, 2007 (RTP 2007), Catania, OCT 02-05, 2007
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mangano F, Caristia L, Costa N, Camalleri M, Ravesi S, Scalese S, Bagiante S, Privitera V (literal)

Pagina inizio

• 271 (literal)

Pagina fine

• 274 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• 15TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2007 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• In this paper we discuss the laser annealing crystallization of hydrogenated a-Si film deposited at 250 °C by means of PECVD technique. Abrupt out-diffusion of hydrogen damages the deposited layers during single shot high energy density laser annealing. On the contrary, a multisteps laser annealing approach, from low to high energy density, allows us to achieve good poly-Si film, without any H-related defect. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• STMicroelectronics Catania; IMM-CNR Catania (literal)

Titolo

• Laser annealing of a-Si for realization of polycrystalline Si film on plastic substrate (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-1-4244-1227-3 (literal)

Abstract

• In this paper we discuss the laser annealing crystallization of hydrogenated a-Si film deposited at 250 degrees C by means of PECVD technique. Abrupt out-diffusion of hydrogen damages the deposited layers during single shot high energy density laser annealing. On the contrary, a multisteps laser annealing approach, from low to high energy density, allows us to achieve good poly-Si film,, without any H-related defect. (literal)

Editore

• IEEE, 345 E 47TH ST, NY 10017 (Editore)

Prodotto di

• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SILVIA SCALESE (Persona)
• VITTORIO PRIVITERA (Persona)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• SILVIA SCALESE (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Editore di

• IEEE, 345 E 47TH ST, NY 10017 (Editore)