Silicon resonant cavity enhanced photodetectors at 1.55 microns (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Silicon resonant cavity enhanced photodetectors at 1.55 microns (Contributo in atti di convegno) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Casalino M, Sirleto L, Moretti L, Panzera D, Libertino S, Rendina I (2005)
  Silicon resonant cavity enhanced photodetectors at 1.55 microns
  in SPIE: Photonic Materials, Devices, and Applications, Sevilla, Spain, MAY 09-11, 2005
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Casalino M, Sirleto L, Moretti L, Panzera D, Libertino S, Rendina I (literal)

Pagina inizio

• 545 (literal)

Pagina fine

• 553 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Photonic Materials, Devices, and Applications, Pts 1 and 2 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 5840 (literal)

Rivista

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• Proc. SPIE 5840, 545 (2005) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 9 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• Silicon optical receivers, operating at the optical communication wavelengths in the 1.3-1.55 µm range, have attracted much research effort. Unfortunately, the performance of the devices proposed in literature are poor because this wavelength range is beyond the absorption edge of silicon. In order to extend the maximum detectable wavelength, the most common approach, in the realization of Si-based detectors, is the use of silicon-germanium layers on silicon, anyway, requiring processes non compatible with standard CMOS technology. In this paper, with the aim to extend the operation of silicon-based photo-detectors up to the 1.3-1.55 µm range, an alternative approach is investigated: we propose the design of a resonant cavity enhanced Schottky photodetector based on the internal photoemission effect. The device fabrication is completely compatible with standard silicon technology. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM-CNR (literal)

Titolo

• Silicon resonant cavity enhanced photodetectors at 1.55 microns (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 0-8194-5835-X (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume

• AA.VV. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• G. Badenes, D. Abbott, A. Serpenguzel (literal)

Abstract

• Silicon optical receivers, operating at the optical communication wavelengths in the 1.3-1.55 mu m range, have attracted much research effort. Unfortunately, the performance of the devices proposed in literature are poor because this wavelength range is beyond the absorption edge of silicon. In order to extend the maximum detectable wavelength, the most common approach, in the realization of Si-based detectors, is the use of silicon-germanium layers on silicon, anyway, requiring processes non compatible with standard CMOS technology. In this paper, with the aim to extend the operation of silicon-based photo-detectors up to the 1.3-1.55 pm range, an alternative approach is investigated: we propose the design of a resonant cavity enhanced Schottky photodetector based on the internal photoemission effect. The device fabrication is completely compatible with standard silicon technology. (literal)

Prodotto di

• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi sensori in tecnologia planare (MD.P05.023.002) (Modulo)

Autore CNR

• SEBANIA LIBERTINO (Unità di personale interno)
• IVO RENDINA (Unità di personale interno)
• MAURIZIO CASALINO (Unità di personale esterno)
• LUIGI MORETTI (Unità di personale esterno)
• LUIGI SIRLETO (Persona)

Incoming links:

Autore CNR di

• SEBANIA LIBERTINO (Unità di personale interno)
• MAURIZIO CASALINO (Unità di personale esterno)
• LUIGI MORETTI (Unità di personale esterno)
• LUIGI SIRLETO (Persona)
• IVO RENDINA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)
• Nuovi sensori in tecnologia planare (MD.P05.023.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)