Local Self-Order Observed During Chemical Vapor Deposition of Silicon Quantum Dots for Application in Nanocrystal Memories (Contributo in atti di convegno)

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  • Local Self-Order Observed During Chemical Vapor Deposition of Silicon Quantum Dots for Application in Nanocrystal Memories (Contributo in atti di convegno) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Rosaria A. Puglisi, Giuseppe Nicotra, Salvatore Lombardo, Barbara De Salvo1, Cosimo Gerardi2. (2004)
    Local Self-Order Observed During Chemical Vapor Deposition of Silicon Quantum Dots for Application in Nanocrystal Memories
    in Materials Research Society Fall Meeting, Boston USA, 30 novembre - 2 dicembre 2004
    (literal)
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  • Rosaria A. Puglisi, Giuseppe Nicotra, Salvatore Lombardo, Barbara De Salvo1, Cosimo Gerardi2. (literal)
Pagina inizio
  • D5.6.1 (literal)
Pagina fine
  • D5.6.7 (literal)
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  • 830 (literal)
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  • 7 (literal)
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  • A systematic study on the Si inter-dot distance after nucleation on silicon oxide substrates is presented. The process has been followed from the very early stages of the dot formation up to 25% of coverages. Structural characterization has been performed by means of energy filtered transmission electron microscopy, which allowed us to observe dot sizes down to 0.5 nm in radius. Silicon nanodots are shown to be surrounded by a depleted zone, where no new Si dots are observed to nucleate. The average size of such a zone ranges between 4 and 9 nm, depending on the deposition conditions. The dot radius is shown to be proportional to the depleted region size, thus indicating the scaling behaviour of the process. (literal)
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  • CNR-IMM, Sezione di Catania, Str.le Primosole 50 95121 Catania, Italy 1CEA-LETI, Grenoble, France 2STMicroelectronics, Str.le Primosole 50 95121 Catania, Italy. (literal)
Titolo
  • Local Self-Order Observed During Chemical Vapor Deposition of Silicon Quantum Dots for Application in Nanocrystal Memories (literal)
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  • A. Claverie, T-J. King, J. Slaughter, D. Tsoukalas (literal)
Abstract
  • A systematic study on the Si dot formation after chemical vapor deposition on silicon oxide substrates is presented. The process has been followed from the early stages of the dot formation up to 25% of coverages. Structural characterization has been performed by means of energy filtered transmission electron microscopy, which allowed us to observe dot sizes down to 0.5 nm in radius. The nanodots are shown to be surrounded by a depleted zone, where no new Si dots are observed to nucleate. This has been attributed to the adatoms capture mechanism by pre-existing dots, during the deposition. The dot radius and the capture size are shown to collapse onto the same curve, thus indicating the scaling behavior of the process. The adatom diffusion process is shown to restrict the number of nucleation sites, the final dot size and the dot position, thus driving the process toward partial self-order. (literal)
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