Structural properties of silicon nanostructures determined by energy-filtered transmission electron microscopy (Contributo in atti di convegno)

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  • Structural properties of silicon nanostructures determined by energy-filtered transmission electron microscopy (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Boninelli S, Iacona F, Bongiorno C, Franzò G, Priolo F (2003)
    Structural properties of silicon nanostructures determined by energy-filtered transmission electron microscopy
    in Microscopy of Semiconducting Materials, Univ Cambridge, Cambridge, ENGLAND
    (literal)
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  • Boninelli S, Iacona F, Bongiorno C, Franzò G, Priolo F (literal)
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  • 429 (literal)
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  • MICROSCOPY OF SEMICONDUCTING MATERIALS (literal)
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  • 180 (literal)
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  • Si nanocrystals embedded in SiO2 have been produced by thermal annealing of SiOx films prepared by PECVD. The structural properties of the system have been investigated by energy-filtered transmission electron microscopy. The technique has shown the presence of a significant amount of amorphous nanostructures, not detectable by using the conventional dark field TEM technique. The nanostructure mean size, including both the amorphous and the crystalline ones, and the crystalline fraction have been evaluated as a function of the annealing temperature. (literal)
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  • ISI Web of Science (WOS) (literal)
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  • Catania Univ, INFM, Via S Sofia 64, I-95123 Catania, Italy. Catania Univ, Dipartimento Fis, I-95123 Catania, Italy CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)
Titolo
  • Structural properties of silicon nanostructures determined by energy-filtered transmission electron microscopy (literal)
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  • Cullis, AG; Midgley, PA (literal)
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  • Cullis, AG; Midgley, PA (literal)
Abstract
  • Si nanocrystals embedded in SiO2 have been produced by thermal annealing of SiOx films prepared by PECVD. The structural properties of the system have been investigated by energy-filtered transmission electron microscopy. The technique has shown the presence of a significant amount of amorphous nanostructures, not detectable by using the conventional dark field TEM technique. The nanostructure mean size, including both the amorphous and the crystalline ones, and the crystalline fraction have been evaluated as a function of the annealing temperature. (literal)
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