Scanning capacitance microscopy of semiconductors for process and device characterisation (Contributo in atti di convegno)

Type
Label
  • Scanning capacitance microscopy of semiconductors for process and device characterisation (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Raineri V, Goghero D, Giannazzo F, Mirabella S, Priolo F, Napolitani E (2003)
    Scanning capacitance microscopy of semiconductors for process and device characterisation
    in Conference on Microscopy of Semiconducting Materials, Univ Cambridge, Cambridge, ENGLAND, MAR 31, 2003
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Raineri V, Goghero D, Giannazzo F, Mirabella S, Priolo F, Napolitani E (literal)
Pagina inizio
  • 363 (literal)
Pagina fine
  • 372 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 180 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania; Catania Univ, Dept Phys & Astron, I-65123 Catania, Italy; Univ Padua, Dept Phys, I-35131 Padua, Italy (literal)
Titolo
  • Scanning capacitance microscopy of semiconductors for process and device characterisation (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 0-7503-0979-2 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Cullis, AG; Midgley, PA (literal)
Abstract
  • The recent activity performed on scanning capacitance microscopy is reviewed. The influence of surface states on measurements is described and reproducibility and sensitivity issues are addressed. Some examples of applications on devices and process characterisation and interpretation are shown. The application of the method to SiC is also discussed. (literal)
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