Experimental and theoretical joint study on the electronic and structural properties of silicon nanocrystals embedded in SiO2: active role of the interface region (Contributo in atti di convegno)

Type
Label
  • Experimental and theoretical joint study on the electronic and structural properties of silicon nanocrystals embedded in SiO2: active role of the interface region (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Daldosso N., Luppi M., Dalba G., Pavesi L., F. Rocca, Priolo F., Franzò G., Iacona F., Degoli E., Magri R., Ossicini S. (2003)
    Experimental and theoretical joint study on the electronic and structural properties of silicon nanocrystals embedded in SiO2: active role of the interface region
    in Materials Research Society Spring Meeting, San Francisco (USA), 21-24 Aprile 2003
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Daldosso N., Luppi M., Dalba G., Pavesi L., F. Rocca, Priolo F., Franzò G., Iacona F., Degoli E., Magri R., Ossicini S. (literal)
Pagina inizio
  • 87 (literal)
Pagina fine
  • 92 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • OPTOELECTRONICS OF GROUP-IV-BASED MATERIALS (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 770 (literal)
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  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • 1 INFM-Dipartimento di Fisica, Università di Trento, via Sommarive 14, I-38050 Povo (Trento) 2 CNR-IFN, Sezione \"CeFSA\" di Trento, I-38050 Povo (Trento), Italy 3 INFM-Dipartimento di Fisica, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy 4 CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy (literal)
Titolo
  • Experimental and theoretical joint study on the electronic and structural properties of silicon nanocrystals embedded in SiO2: active role of the interface region (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 1-55899-707-5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • Gregorkiewicz, T; Elliman, RG; Fauchet, PM; Hutchby, JA (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Gregorkiewicz, T; Elliman, RG; Fauchet, PM; Hutchby, JA (literal)
Abstract
  • The local environment of light emitting silicon nanocrystals (Sync) embedded in amorphous SiO2 has been studied by x-ray absorption spectroscopy (XAS) and by ab-initio total energy calculations. Si-nc have been formed by PECVD deposition of SiOx with different Si content (from 35 to 42 at.%) and thermal annealing at high temperature (1250 C). The comparison between total electron yield (TEY) and photoluminescence yield (PLY) spectra has allowed the identification of a modified region of SiO2 (about 1 nm thick) surrounding the Si-nc, which participates to the light emission of Si-nc. Total energy calculations, within the density functional theory, clearly show that Si-nc are surrounded by a cap-shell of stressed SiO2 with a thickness of about 1 run. The optoelectronic properties show the appearance of localized states not only in the Sinc core region but also in the modified SiO2 region. (literal)
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