Indium in silicon: a study on diffusion and electrical activation (Contributo in atti di convegno)

Type
Label
  • Indium in silicon: a study on diffusion and electrical activation (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Scalese S., La Magna A., Mannino G., Privitera V., Bersani M., Giubertoni D., Solmi S., Pichler P. (2003)
    Indium in silicon: a study on diffusion and electrical activation
    in Symposium of the Materials Research Society, San Francisco (USA), APR 22-24, 2003
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Scalese S., La Magna A., Mannino G., Privitera V., Bersani M., Giubertoni D., Solmi S., Pichler P. (literal)
Pagina inizio
  • 205 (literal)
Pagina fine
  • 210 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • CMOS FRONT-END MATERIALS AND PROCESS TECHNOLOGY Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 765 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy ITC-IRST, Trento FHG, Germany (literal)
Titolo
  • Indium in silicon: a study on diffusion and electrical activation (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 1-55899-702-4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • King, TJ; Yu, B; Lander, RJP; Saito, S (literal)
Abstract
  • In this work we investigate the diffusion and the electrical activation of In atoms implanted in silicon with different energies, in the range 80-360 keV, after rapid thermal processing. Our investigation shows a clear dependence of In out-diffusion and electrical activation on the implant depth, being the electrically active fraction higher with increasing the implant energy for a fixed dose. The data are explained considering the balance between the local In concentration and the C background inside the silicon substrate and the formation of C-In complexes, which play a role in the enhanced electrical activation due to the shallower level they introduce into the Si band gap (E-nu + O. 111 eV), with respect to the rather deep level (E-nu + O. 156 eV) of In alone. In and C co-implantation has also been studied within this work, in order to confirm the key role of C in the increase of the electrical activation. A large increase of the electrical activation has been detected in the co-implanted samples, up to a factor of about 8 after annealing at 900degreesC. However, C precipitation occurs at 1100degreesC, with dramatic effects on the carrier concentration. (literal)
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