http://www.cnr.it/ontology/cnr/individuo/prodotto/ID86510
Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell (Contributo in atti di convegno)
- Type
- Label
- Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell (Contributo in atti di convegno) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1109/ESSDERC.2003.1256818 (literal)
- Alternative label
Corso D, Crupi I, Ancarani V, Ammendola G, Molas G, Perniola L, Lombardo S, Gerardi C, De Salvo B (2003)
Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell
in 33th European Solid-State Device Research (ESSDERC) Conference, Lisbona (Portogallo)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Corso D, Crupi I, Ancarani V, Ammendola G, Molas G, Perniola L, Lombardo S, Gerardi C, De Salvo B (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
- We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cell for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed. (literal)
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- IMM-CNR Catania;
CEA-LETI Grenoble;
STMicroelectronics Catania (literal)
- Titolo
- Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- Abstract
- We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cells for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed. (literal)
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