Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell (Contributo in atti di convegno)

Type
Label
  • Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/ESSDERC.2003.1256818 (literal)
Alternative label
  • Corso D, Crupi I, Ancarani V, Ammendola G, Molas G, Perniola L, Lombardo S, Gerardi C, De Salvo B (2003)
    Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell
    in 33th European Solid-State Device Research (ESSDERC) Conference, Lisbona (Portogallo)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Corso D, Crupi I, Ancarani V, Ammendola G, Molas G, Perniola L, Lombardo S, Gerardi C, De Salvo B (literal)
Pagina inizio
  • 91 (literal)
Pagina fine
  • 94 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cell for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed. (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania; CEA-LETI Grenoble; STMicroelectronics Catania (literal)
Titolo
  • Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 0-7803-7999-3 (literal)
Abstract
  • We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cells for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed. (literal)
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