http://www.cnr.it/ontology/cnr/individuo/prodotto/ID86505

Double YIG Band-Stop Resonator on Silicon Membrane (Contributo in atti di convegno)

Type

Label

Double YIG Band-Stop Resonator on Silicon Membrane (Contributo in atti di convegno) (literal)

Anno

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

Alternative label

Sajin G., Marcelli R., Cismaru A., Craciunoiu F. (2003)
Double YIG Band-Stop Resonator on Silicon Membrane
in 33rd European Microwave Conference, EuMW 2003, Munich, Germany, October 6-10, 2003
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Pagina inizio

Pagina fine

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

Nat. Institute for Micro- and Nano-Technologies, Bucuresti, Romania CNR-IMM Roma (literal)

Titolo

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume

Abstract

In this paper is presented a microwave tunable band-stop configuration based on the combination of two cascaded magnetostatic wave resonators, working at frequencies greater than 10 GHz. The structure has been obtained by coupling YIG film straight edge resonators (SER) excited by magnetostatic waves (MSW), coupled to a microstrip line on a micromachined silicon membrane. Measurements performed at different DC biasing magnetic fields demonstrate a tunability between 10 GHz and 17 GHz. The attenuation ranges between 20 and 25 dB at the central frequency domain (11 - 12 GHz and 13 - 16 GHz) and between 34 and 40 dB at the limits of the frequency domain (10 - 11 GHz ... 16 - 17 GHz). (literal)

Editore