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Structural modification of laser annealed a-Si1-xCx : H films (Articolo in rivista)
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- Structural modification of laser annealed a-Si1-xCx : H films (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Alternative label
Coscia, U; Ambrosone, G; Minarini, C; Parisi, V; Schutzmann, S; Tebano, A (2006)
Structural modification of laser annealed a-Si1-xCx : H films
in Applied surface science
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Coscia, U; Ambrosone, G; Minarini, C; Parisi, V; Schutzmann, S; Tebano, A (literal)
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- Univ Naples Federico II, Dipartimento Sci Fisiche, I-80126 Naples, Italy; Univ Naples Federico II, CNR, INFM Coherentia, I-80126 Naples, Italy; ENEA, Res Ctr Loc Granatello, I-80055 Naples, Italy; Univ Roma La Sapienza, INFM, Dipartimento Med Sperimentale & Patol, Rome, Italy; Univ Roma Tor Vergata, INFM, Dipartimento Sci & Tecnol Chim, Rome, Italy; Univ Roma Tor Vergata, INFM Coherentia, Rome, Italy; Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Fisiche & Energet, Rome, Italy (literal)
- Titolo
- Structural modification of laser annealed a-Si1-xCx : H films (literal)
- Abstract
- Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to 0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing experiments. After the laser treatments all the films show structural modifications. It has been obtained that with increasing, x the crystallinity degree of the Si phase decreases, while that of the SiC phase increases and becomes predominant for x = 0.39. In the overstoichiometric samples only the c-SiC phase has been observed. In all the treated samples 3C-SiC crystallites have been detected. (c) 2005 Elsevier B.V. All rights reserved. (literal)
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