High-quality in situ manganite thin films by pulsed laser deposition at low background pressures (Articolo in rivista)

Type
Label
  • High-quality in situ manganite thin films by pulsed laser deposition at low background pressures (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1140/epjb/e2006-00238-2 (literal)
Alternative label
  • Tebano, A; Balestrino, G; Boggio, NG; Aruta, C; Davidson, B; Medaglia, PG (2006)
    High-quality in situ manganite thin films by pulsed laser deposition at low background pressures
    in The European physical journal. B, Condensed matter physics (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Tebano, A; Balestrino, G; Boggio, NG; Aruta, C; Davidson, B; Medaglia, PG (literal)
Pagina inizio
  • 337 (literal)
Pagina fine
  • 340 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.springerlink.com/content/f80g0jw13h68jx24/?MUD=MP (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 51 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Roma Tor Vergata, CNR, INFM, COHERENTIA, I-00133 Rome, Italy; Univ Roma Tor Vergata, Dipartimento Ingn Meccan, I-00133 Rome, Italy; CNR, INFM, TASC Natl Lab, I-34012 Basovizza, TS, Italy (literal)
Titolo
  • High-quality in situ manganite thin films by pulsed laser deposition at low background pressures (literal)
Abstract
  • We show that by decreasing the laser fluence it is possible to improve the oxidation process in manganite thin films under low background oxygen pressure, allowing the in situ use of conventional Reflection High Energy Electron Diffraction diagnostic. Films deposited at low fluence (corresponding to a deposition rate per pulse lower than 10(-2) unit cells per laser shot) show a two-dimensional growth mode and possess very good transport properties without the necessity of any further post-growth annealing treatment. A physical model, based on the plume-background interaction as a primary mechanism of film oxidation during growth, is proposed to explain the experimental findings. (literal)
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