Hydrogen terminated diamond MESFETs: new technology for RF power applications (Contributo in atti di convegno)

Type
Label
  • Hydrogen terminated diamond MESFETs: new technology for RF power applications (Contributo in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • P. Calvani (1), G. Conte (1), D. Dominijanni (2), E. Giovine (2), B. Pasciuto (3), E. Limiti (3) (2010)
    Hydrogen terminated diamond MESFETs: new technology for RF power applications
    in IEEE 5th European Microwave Integrated Circuits Conference, Paris, FRANCE, SEP 26-OCT 01, 2010
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • P. Calvani (1), G. Conte (1), D. Dominijanni (2), E. Giovine (2), B. Pasciuto (3), E. Limiti (3) (literal)
Pagina inizio
  • 122 (literal)
Pagina fine
  • 125 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • 2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 Electronics Engineering Dept., University \"Roma Tre\" Via della Vasca Navale, 84 - 00146 Roma, Italy 2 Institute of Photonics and Nanotechnologies (IFN), CNR Via Cineto Romano, 42 - 00156 Roma, Italy 3 Electronics Engineering Dept., University \"Tor Vergata\" Via del Politecnico, 1 - 00133 Roma, Italy (literal)
Titolo
  • Hydrogen terminated diamond MESFETs: new technology for RF power applications (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-2-87487-017-0 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • IEEE (literal)
Abstract
  • Metal-Semiconductor Field Effect Transistors (MESFETs) are fabricated on hydrogen terminated chemical vapour deposited diamond substrate with sub-micron gate length. Ohmic contacts and passivation technologies are optimized for power applications. DC and RF preliminary measurements are performed and encouraging results in terms of hydrogen termination stability are achieved. Drain to Source current of more than 200 mA/mm is obtained with 80 mS/mm for transconductance. Maximum Oscillation Frequency is about 30 GHz with a current gain at 1 GHz around 23 dB. Load-pull measurements will be performed in order to investigate RF power performances of such promising devices. (literal)
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