http://www.cnr.it/ontology/cnr/individuo/prodotto/ID81962
Trilayer Electron-beam Lithography and Surface Preparation for Sub-micron Schottky Contacts on GaAs Heterostructures (Contributo in atti di convegno)
- Type
- Label
- Trilayer Electron-beam Lithography and Surface Preparation for Sub-micron Schottky Contacts on GaAs Heterostructures (Contributo in atti di convegno) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Alternative label
D. Dominijanni (a,c), R. Casini (a), V. Foglietti (a), M. Ortolani (a), A. Notargiacomo (a), C. Lanzieri (b), M. Peroni (b), P. Romanini (b), E. Giovine (a) (2010)
Trilayer Electron-beam Lithography and Surface Preparation for Sub-micron Schottky Contacts on GaAs Heterostructures
in IEEE Proc. of the 35th international conference on infrared millimetre and terahertz waves IRMMW-THz 2010, Rome, ITALY, SEP 05-10, 2010
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- D. Dominijanni (a,c), R. Casini (a), V. Foglietti (a), M. Ortolani (a), A. Notargiacomo (a), C. Lanzieri (b), M. Peroni (b), P. Romanini (b), E. Giovine (a) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) (literal)
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- a CNR - Istituto di Fotonica e Nanotecnologie, Rome, 00156 Italy
b SELEX Sistemi Integrati, Rome, 00156 Italy
c Dipartimento di Ingegneria Elettronica, Università Roma TRE, Rome, 00146 Italy (literal)
- Titolo
- Trilayer Electron-beam Lithography and Surface Preparation for Sub-micron Schottky Contacts on GaAs Heterostructures (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- 978-1-4244-6657-3 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
- Abstract
- Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1x1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes. (literal)
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