Ultra-shallow junction by laser annealing: integration issues and modelling (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Ultra-shallow junction by laser annealing: integration issues and modelling (Contributo in atti di convegno) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nimb.2006.10.004 (literal)

Alternative label

• A. La Magna, P. Alippi, I Deretzis, V. Privitera, G. Fortunato, A. Magrì, E.V. Monakhov, B.G. Svensson (2006)
  Ultra-shallow junction by laser annealing: integration issues and modelling
  in Proceedings of E-MRS, Nice, 2006
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. La Magna, P. Alippi, I Deretzis, V. Privitera, G. Fortunato, A. Magrì, E.V. Monakhov, B.G. Svensson (literal)

Pagina inizio

• 1 (literal)

Pagina fine

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 2531 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• Spring Meeting, May 29- June 2, 2006, Nice, France (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-2 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, Stradale Primosole 50, 95121 Catania, Italy CNR-IFN, Via Cineto Romano 42, 00156 Rome, Italy STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy Department of Physics, Physical Electronic, University of Oslo, P.O. Box 1048 Blindern, N-0316 Olso, Norway (literal)

Titolo

• Ultra-shallow junction by laser annealing: integration issues and modelling (literal)

Abstract

• A revolutionary approach to the technology design is required for the integration of the laser annealing process in nano-electronic device fabrication. The list of the integration issues includes: the patterning effect, the extreme non-equilibrium kinetics of dopant and defects, the material modification due to the melting-regrowth phenomena (in the melting regime) and the residual damage problem. The intense research effort required surely benefits from an adequate development of dedicated technology computer aided design tools. We present the computational apparatus needed for the simulation of the laser annealing process in Si-based devices. The tools aim at the simulation at a different resolution (from the atomic to the continuum level) of the phenomena occurring inside the specimen during the irradiation. The usage impact of such simulation tools on the process integration is conclusively crucial for a reliable device design and the final optimisation of fabricated MOS transistors. (literal)

Prodotto di

• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Processi laser per dispostivi a semiconduttore (MD.P05.001.003) (Modulo)

Autore CNR

• PAOLA ALIPPI (Persona)
• ANTONINO LA MAGNA (Persona)
• GUGLIELMO FORTUNATO (Persona)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• PAOLA ALIPPI (Persona)
• GUGLIELMO FORTUNATO (Persona)

Prodotto

• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Processi laser per dispostivi a semiconduttore (MD.P05.001.003) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)