Ion beam analyses and electrical characterization of substitutional Fe properties in Fe implanted InP (Articolo in rivista)

Type
Label
  • Ion beam analyses and electrical characterization of substitutional Fe properties in Fe implanted InP (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nimb.2006.03.158 (literal)
Alternative label
  • Cesca, T; Verna, A; Mattei, G; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F (2006)
    Ion beam analyses and electrical characterization of substitutional Fe properties in Fe implanted InP
    in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cesca, T; Verna, A; Mattei, G; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F (literal)
Pagina inizio
  • 894 (literal)
Pagina fine
  • 896 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 249 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; Univ Bologna, Dipartmento Fis, I-40127 Bologna, Italy; Univ Catania, Dipartimento Fis, I-95123 Catania, Italy; INFM, MATIS, I-95123 Catania, Italy (literal)
Titolo
  • Ion beam analyses and electrical characterization of substitutional Fe properties in Fe implanted InP (literal)
Abstract
  • We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The effect of post-implantation annealing treatments on the crystal damage and the lattice location of the Fe atoms was studied by PIXE-RBS-channeling measurements. Current-voltage measurements and simulations were used to characterize the electrical properties due to the presence of Fe-related deep traps. The results show that the background n-doping density plays a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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