Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Alternative label

• Romano, L; Piro, AM; Grimaldi, MG; Rimini, E (2006)
  Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation
  
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Romano, L; Piro, AM; Grimaldi, MG; Rimini, E (literal)

Pagina inizio

• 181 (literal)

Pagina fine

• 184 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 249 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Catania Univ, CNR, INFM, MATIS, I-95123 Catania, Italy; Catania Univ, Dipartimento Fis & Astron, I-95123 Catania, Italy; Sez Catania, CNR, IMM, I-95121 Catania, Italy (literal)

Titolo

• Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation (literal)

Abstract

• Substitutional boron atoms in silicon experience an off-lattice displacement during ion-irradiation with energetic light ions at room temperature. The off-lattice displacement rate has been measured in a B-doped Si by channelling analyses using nuclear reaction (650 keV proton beam, B-11(p,alpha)Be-8). The normalized channeling yield chi of B increases with the ion fluence until it saturates at a value smaller than 1. This indicates that B is not totally displaced in a random site. The carrier concentration in layer, measured by Van Der Pauw and Hall effect techniques, decreases during irradiation until complete de-activation of B occurs. The comparison of electrical and structural analyses is consistent with the formation of small, not electrically active B complexes stable at room temperature in presence of an excess of point defects. (c) 2006 Elsevier B.V. All rights reserved. (literal)

Prodotto di

• Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.001) (Modulo)

Autore CNR

• MARIA GRAZIA GRIMALDI (Unità di personale esterno)

Insieme di parole chiave

• Parole chiave di "Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• MARIA GRAZIA GRIMALDI (Unità di personale esterno)

Prodotto

• Controllo su scala atomica dei materiali per dispositivi innovativi elettronici e fotonici basati su silicio. (MD.P05.006.001) (Modulo)

Insieme di parole chiave di

• Parole chiave di "Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation" (Insieme di parole chiave)