Structural, optical and electrical properties of helium diluted a-Si1-xCx : films deposited by PECVD (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Structural, optical and electrical properties of helium diluted a-Si1-xCx : films deposited by PECVD (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Alternative label

• Loulou, M; Gharbi, R; Fathallah, MA; Ambrosone, G; Coscia, U; Abbate, G; Marino, A; Ferrero, S; Tresso, E (2006)
  Structural, optical and electrical properties of helium diluted a-Si1-xCx : films deposited by PECVD
  in Journal of non-crystalline solids
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Loulou, M; Gharbi, R; Fathallah, MA; Ambrosone, G; Coscia, U; Abbate, G; Marino, A; Ferrero, S; Tresso, E (literal)

Pagina inizio

• 1388 (literal)

Pagina fine

• 1391 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 352 (literal)

Rivista

• Journal of non-crystalline solids (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Ecole Super Sci & Tech Tunis, Dept Phys, Tunis 1008, Tunisia; Univ Naples Federico II, INFM Coherentia, I-80126 Naples, Italy; Univ Naples Federico II, Dipartimento Sci Fisiche, I-80126 Naples, Italy; Politecn Turin, Dipartimento Fis & Unita, Ist Nazl Fis Mat, I-10129 Turin, Italy (literal)

Titolo

• Structural, optical and electrical properties of helium diluted a-Si1-xCx : films deposited by PECVD (literal)

Abstract

• We present results on optical, structural and electrical properties of a-Si1-xCx:H films deposited by plasma enhanced chemical vapor deposition in the low power regime, with C fraction from 0 to 0.28. The absorption coefficient has been obtained in the region 0.73-4.5 eV by means of ellipsometry, reflectance-transmittance and photothermal deflection spectroscopy. The addition of carbon in the alloy increases the disorder and the density of defects: samples deposited with high carbon content have poorer optoelectronic properties. Two conduction regimes are observed: extended state conduction and hopping conduction in the conduction band tail. A visible PL peak that widens and shifts to higher energies as the carbon content increases has been observed. (c) 2006 Elsevier B.V. All rights reserved. (literal)

Prodotto di

• Fisica dei materiali nanostrutturati per sensori di gas (MD.P05.016.001) (Modulo)
• Soft Materials nano strutturati per fotonica, modelli teorici, tecniche ottiche di dispositivi e sistemi per applicazioni (MD.P01.015.001) (Modulo)

Autore CNR

• Giuseppina Ambrosone (Persona)

Insieme di parole chiave

• Parole chiave di "Structural, optical and electrical properties of helium diluted a-Si1-xCx : films deposited by PECVD" (Insieme di parole chiave)

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Autore CNR di

• Giuseppina Ambrosone (Persona)

Prodotto

• Soft Materials nano strutturati per fotonica, modelli teorici, tecniche ottiche di dispositivi e sistemi per applicazioni (MD.P01.015.001) (Modulo)
• Fisica dei materiali nanostrutturati per sensori di gas (MD.P05.016.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of non-crystalline solids (Rivista)

Insieme di parole chiave di

• Parole chiave di "Structural, optical and electrical properties of helium diluted a-Si1-xCx : films deposited by PECVD" (Insieme di parole chiave)