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Silicon-carbon films deposited at low substrate temperature (Articolo in rivista)

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Silicon-carbon films deposited at low substrate temperature (Articolo in rivista) (literal)

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Ambrosone, G; Coscia, U; Lettieri, S; Maddalena, P; Della Noce, M; Ferrero, S; Restello, S; Rigato, V; Tucci, M (2006)
Silicon-carbon films deposited at low substrate temperature
in Journal of non-crystalline solids
(literal)

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Ambrosone, G; Coscia, U; Lettieri, S; Maddalena, P; Della Noce, M; Ferrero, S; Restello, S; Rigato, V; Tucci, M (literal)

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Univ Naples Federico II, Dipartimento Sci Fisiche, MSA, I-80126 Naples, Italy; CNR, INFM, I-80125 Naples, Italy; ENEA, Res Ctr, I-80055 Portici, Na, Italy; Politecn Turin, Dipartimento Fis, I-10129 Turin, Italy; Ist Nazl Fis Nucl, Lab Nazl Legnaro, Legarno, Italy; ENEA Casaccia, I-00060 Rome, Italy (literal)

Titolo

Abstract

Films composed of Si crystallites embedded in an amorphous silicon-carbon matrix have been deposited at low temperature by PECVD onto Corning glass and SnO2:F coated glass substrates. An increase of RF power from 15 to 100 W reduces the silicon crystalline fraction and enhances the carbon content in the amorphous material, causing the crystalline to amorphous phase transition. SnO2 coated glass substrate enhances the nucleation of silicon grains and the optical absorbance in the wavelength range of approximate to 300-1000 nm decreases with increasing the RF power. (c) 2006 Elsevier B.V. All rights reserved. (literal)

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