Surface Concentration Mapping of InAs/GaAs Quantum Dots (Contributo in atti di convegno)

Type
Label
  • Surface Concentration Mapping of InAs/GaAs Quantum Dots (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Biasiol, g (1); Heun, s (1) ; Golinelli, gb (2); Locatelli, a (3); Mentes, to (3) ; Guo, fz (4); Sorba, l (1)-(2) (2007)
    Surface Concentration Mapping of InAs/GaAs Quantum Dots
    in 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria.
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Biasiol, g (1); Heun, s (1) ; Golinelli, gb (2); Locatelli, a (3); Mentes, to (3) ; Guo, fz (4); Sorba, l (1)-(2) (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) Laboratorio Nazionale TASC INFM-CNR, Trieste, Italy (2) Università degli Studi di Modena e Reggio Emilia, Modena, Italy (3) Sincrotrone Trieste S.c.p.a., Trieste, Italy (4) JASRI/SPring-8, 1-1-1, Kouto, Mikazuki, Sayo, Hyogo 679-5198, Japan (literal)
Titolo
  • Surface Concentration Mapping of InAs/GaAs Quantum Dots (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-0-7354-0397-0 (literal)
Abstract
  • By using X-Ray Photoemission Electron Microscopy we have obtained two-dimensional maps of the in-plane surface composition of InAs/GaAs self-assembled quantum dots. The chemical analysis reveals a higher In composition on the dot surface, with respect to the surrounding wetting layer, with a concentration increasing from the sides to the center of the dots. Comparison with concentrations found in the core of similar dots suggests strong In segregation on their surface, similarly to the surrounding wetting layer. (literal)
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