Study of SiO2 Modifications Induced by Oxygen Plasmas and Their Effect on Wet Processes (Contributo in atti di convegno)

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  • Study of SiO2 Modifications Induced by Oxygen Plasmas and Their Effect on Wet Processes (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/1.2779385 (literal)
Alternative label
  • Votta A.(a), H. Bellandi E.(a), Alessandri M.(a), Vedda A.(a), Ferretti A.M.(c), Fasoli M.(b), and Moretti F.(a) (2007)
    Study of SiO2 Modifications Induced by Oxygen Plasmas and Their Effect on Wet Processes
    in 212th ECS Meeting, Washington, DC, USA.
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Votta A.(a), H. Bellandi E.(a), Alessandri M.(a), Vedda A.(a), Ferretti A.M.(c), Fasoli M.(b), and Moretti F.(a) (literal)
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  • 239 (literal)
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  • Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10 (literal)
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  • SCIFINDER (literal)
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  • a-STMicroelectronics, Via Olivetti 2, Agrate Bza (MI) Italy , b-Universit√† di Milano-Bicocca, Materials Science Department, Via Cozzi 53, Milano, Italy , c-CNR-INFM laboratorio MDM,via Olivetti 2, Agrate Bza (MI) Italy (literal)
Titolo
  • Study of SiO2 Modifications Induced by Oxygen Plasmas and Their Effect on Wet Processes (literal)
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  • T. Hattori; R. Novak; J. Ruzyllo; P. Besson; P. Mertens (literal)
Abstract
  • Oxygen plasmas, commonly used in typical C-MOS process flow, cause silicon oxide structure to be significantly modified: as a consequence wet processes, that are sensitive to oxide defectivity, need to be retargeted. In this paper structure modifications, induced in boron implanted SiO2 by RF and TCP plasma have been studied by thermally stimulated luminescence, charging measurements and Electron Paramagnetic Resonance (EPR). Different kind and quantity of point defects have been identified by thermally stimulated luminescence technique as a function of plasma generator. These results match with EPR analysis, charging measurements and HF etches rate profile. (literal)
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