Effect of the triplet state on the random telegraph signal in Si n-MOSFETs (Articolo in rivista)

Type
Label
  • Effect of the triplet state on the random telegraph signal in Si n-MOSFETs (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Prati, E; Fanciulli, M; Ferrari, G; Sampietro, M (2006)
    Effect of the triplet state on the random telegraph signal in Si n-MOSFETs
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Prati, E; Fanciulli, M; Ferrari, G; Sampietro, M (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 74 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Ist Nazl Fis Mat, CNR, Lab Nazl Mat & Disposit Microelect, I-20041 Agrate Brianza, Italy; Politecn Milan, Dipartimento Elettron & Automat, I-20133 Milan, Italy (literal)
Titolo
  • Effect of the triplet state on the random telegraph signal in Si n-MOSFETs (literal)
Abstract
  • We report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude when the field increases from 0 to 12 T. Similar behavior is found when the static field is either in plane or perpendicular to the two-dimensional electron gas. The experimental data deviate from a pure exponential trend and can be explained by considering a model that includes the triplet state of the trapping center and the polarization of the channel electron gas. (literal)
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