http://www.cnr.it/ontology/cnr/individuo/prodotto/ID72003
J-aggregation in alpha-sexithiophene submonolayer films on silicon dioxide (Articolo in rivista)
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- Label
- J-aggregation in alpha-sexithiophene submonolayer films on silicon dioxide (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1021/ja056060s (literal)
- Alternative label
E. Da Como, M.A. Loi, M. Murgia, R. Zamboni, M. Muccini (2006)
J-aggregation in alpha-sexithiophene submonolayer films on silicon dioxide
in Journal of the American Chemical Society (Online); ACS, American chemical society, Washington, DC (Stati Uniti d'America)
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- E. Da Como, M.A. Loi, M. Murgia, R. Zamboni, M. Muccini (literal)
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- http://pubs.acs.org/journal/jacsat (literal)
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- Titolo
- J-aggregation in alpha-sexithiophene submonolayer films on silicon dioxide (literal)
- Abstract
- We report on the observation of J-aggregates in submonolayer films of R-sexithiophene grown on silicon dioxide. Photoluminescence spectroscopy reveals that submonolayers are formed by molecules lying flat on the substrate with a head to tail configuration. Excitation energy dependence of photolumi- nescence shows a red-shifted absorption with respect to isolated molecules and a negligible Stokes shift between absorption and emission. The pronounced structural order of J-aggregates is reflected in the fwhm of the emission bands. From time-resolved and low-temperature photoluminescence experiments, we infer a quantum yield of the J-aggregate between 0.6 and 1. The demonstration of spontaneous formation of J-aggregates of ?-conjugated systems on amorphous silicon-based substrates can be relevant for the development of organic-inorganic hybrid photonic devices. (literal)
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